Emergence of interfacial conduction and ferromagnetism in MnTe/InP

R. Watanabe, R. Yoshimi, M. Shirai, T. Tanigaki, M. Kawamura, A. Tsukazaki, K. S. Takahashi, R. Arita, M. Kawasaki, Y. Tokura

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7 Citations (Scopus)


We report on emergence of two-dimensional conduction and ferromagnetism at the interface of MnTe thin films and InP substrates. The MnTe/InP heterostructures grown by molecular-beam epitaxy show thickness-independent sheet conductivity above a critical thickness of about 20 nm, indicating the formation of a conducting layer at the interface. Furthermore, the ferromagnetic behavior is confirmed by both magnetization and anomalous Hall effect measurements below a critical temperature of 270 K. The critical temperature is also independent of the thickness. By the investigation of the atomic structure with transmission electron microscopy, we observe a structural anomaly near the interface which consists of an antiprism-type Mn network unlike a prism-type Mn network of conventional MnTe. The band structure calculation shows that the antiprism-type MnTe can host metallic conduction and ferromagnetism, which is consistent with the present experimental results. The interface engineering based on the chalcogenide compound will develop a new arena for designing the emergent low dimensional conduction and magnetism.

Original languageEnglish
Article number181602
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2018 Oct 29


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