TY - GEN
T1 - Emergence of superconductivity on a SrTiO3 surface by electric-field charge accumulation
AU - Ueno, K.
AU - Nakamura, S.
AU - Shimotani, H.
AU - Nojima, T.
AU - Iwasa, Y.
AU - Kawasaki, M.
PY - 2011
Y1 - 2011
N2 - We briefly review principles and main features of an electric double layer transistor (EDLT) as well as electric field induced superconductivity in SrTiO3. EDLT is a field-effect transistor that employs an electrolyte as a gate dielectric. An electric double layer between a semiconductor and the electrolyte attains much higher breakdown field than the maximum of a solid gate dielectric, resulting in high density charge accumulation up to 10 14cm-2. That density is sufficient for inducing new physical phases, such as superconductivity and ferromagnetism, on various oxide systems. We employed a surface of a SrTiO3 single crystal as a semiconductor channel. We have demonstrated insulator-tosuperconductor transition by electric field-effect without chemical doping. Charge carrier density was linearly increased from zero to 1014 cm-2 with increasing gate bias to 3.5 V. Superconducting critical parameters, such as critical temperature Tc, critical magnetic field Hc, and critical current density Jc were examined as a function of carrier density by varying gate bias. Tc was almost constant as a function of the carrier density, contrasting to bell-shaped dependence of Hc and Jc. Temperature dependence of I-V curve shows the BKT-type transition, which indicates two-dimensional superconductivity in the electric field induced superconductivity.
AB - We briefly review principles and main features of an electric double layer transistor (EDLT) as well as electric field induced superconductivity in SrTiO3. EDLT is a field-effect transistor that employs an electrolyte as a gate dielectric. An electric double layer between a semiconductor and the electrolyte attains much higher breakdown field than the maximum of a solid gate dielectric, resulting in high density charge accumulation up to 10 14cm-2. That density is sufficient for inducing new physical phases, such as superconductivity and ferromagnetism, on various oxide systems. We employed a surface of a SrTiO3 single crystal as a semiconductor channel. We have demonstrated insulator-tosuperconductor transition by electric field-effect without chemical doping. Charge carrier density was linearly increased from zero to 1014 cm-2 with increasing gate bias to 3.5 V. Superconducting critical parameters, such as critical temperature Tc, critical magnetic field Hc, and critical current density Jc were examined as a function of carrier density by varying gate bias. Tc was almost constant as a function of the carrier density, contrasting to bell-shaped dependence of Hc and Jc. Temperature dependence of I-V curve shows the BKT-type transition, which indicates two-dimensional superconductivity in the electric field induced superconductivity.
KW - carrier doping
KW - electric double layer transistor
KW - electrochemical transistor
KW - electrolyte
KW - field effect transistor
KW - oxide semiconductor
KW - superconductivity
KW - two dimensional electron gas
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UR - http://www.scopus.com/inward/citedby.url?scp=79955056608&partnerID=8YFLogxK
U2 - 10.1117/12.879922
DO - 10.1117/12.879922
M3 - Conference contribution
AN - SCOPUS:79955056608
SN - 9780819484772
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Oxide-Based Materials and Devices II
T2 - Oxide-Based Materials and Devices II
Y2 - 23 January 2011 through 26 January 2011
ER -