Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene

Taiichi Otsuji; Takayuki Watanabe; Stephane A. Boubanga Tombet; Akira Satou; Wojciech M. Knap; Vyacheslav V. Popov; Maxim Ryzhii; Victor Ryzhii

doi:10.1109/TTHZ.2012.2235911

Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene

Taiichi Otsuji, Takayuki Watanabe, Stephane A. Boubanga Tombet, Akira Satou, Wojciech M. Knap, Vyacheslav V. Popov, Maxim Ryzhii, Victor Ryzhii

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

98 Citations (Scopus)

Abstract

Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III-V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original asymmetrically interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting peculiar carrier transport and optical properties owing to massless and gapless energy spectrum. Theoretical and experimental studies toward the creation of graphene terahertz injection lasers are described.

Original language	English
Article number	6423871
Pages (from-to)	63-71
Number of pages	9
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	3
Issue number	1
DOIs	https://doi.org/10.1109/TTHZ.2012.2235911
Publication status	Published - 2013

Keywords

Compound semiconductors
detectors
graphene
lasers
plasmons
terahertz (THz)

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

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10.1109/TTHZ.2012.2235911

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title = "Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene",

abstract = "Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III-V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original asymmetrically interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting peculiar carrier transport and optical properties owing to massless and gapless energy spectrum. Theoretical and experimental studies toward the creation of graphene terahertz injection lasers are described.",

keywords = "Compound semiconductors, detectors, graphene, lasers, plasmons, terahertz (THz)",

author = "Taiichi Otsuji and Takayuki Watanabe and {Boubanga Tombet}, {Stephane A.} and Akira Satou and Knap, {Wojciech M.} and Popov, {Vyacheslav V.} and Maxim Ryzhii and Victor Ryzhii",

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doi = "10.1109/TTHZ.2012.2235911",

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AU - Otsuji, Taiichi

AU - Watanabe, Takayuki

AU - Boubanga Tombet, Stephane A.

AU - Satou, Akira

AU - Knap, Wojciech M.

AU - Popov, Vyacheslav V.

AU - Ryzhii, Maxim

AU - Ryzhii, Victor

PY - 2013

Y1 - 2013

N2 - Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III-V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original asymmetrically interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting peculiar carrier transport and optical properties owing to massless and gapless energy spectrum. Theoretical and experimental studies toward the creation of graphene terahertz injection lasers are described.

AB - Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III-V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original asymmetrically interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting peculiar carrier transport and optical properties owing to massless and gapless energy spectrum. Theoretical and experimental studies toward the creation of graphene terahertz injection lasers are described.

KW - Compound semiconductors

KW - detectors

KW - graphene

KW - lasers

KW - plasmons

KW - terahertz (THz)

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Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene

Abstract

Keywords

ASJC Scopus subject areas

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