Abstract
A potential notch in the well region is used to control the emission wavelength of type-II InAs/ GaSb/AISb intersubband light-emitting structures. Intersubband absorption measurements are performed to evaluate the subband structure of the active layers and are compared with theory. Type-II quantum cascade structures using these active layers are fabricated and midinfrared intersubband electroluminescence is observed. Calculation indicates that the active layer structure can emit electromagnetic waves in the THz region without employing a wide alloy well.
| Original language | English |
|---|---|
| Pages (from-to) | 4148-4150 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 78 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 2001 Jun 25 |