Emmission of terahertz radiation from an interdigitated grating gates high electron-mobility transistors

Y. M. Meziani, T. Otsuji, E. Sano

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

New doubly interdigitated grating gate high-electron mobility transistor (HEMT) was illuminated at room temperature by a 1.5-μm CW laser. A clear emission of the terahertz radiation has been detected using a Silicon bolometer cooled down to 4.2 K and placed in the front of the sample. The observed signal was related to the self oscillation of the plasma waves in our new HEMT device.

Original languageEnglish
Title of host publicationIRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics
Pages466-467
Number of pages2
Publication statusPublished - 2007
EventJoint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007 - Cardiff, United Kingdom
Duration: 2007 Sept 32007 Sept 7

Publication series

NameIRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics

Conference

ConferenceJoint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007
Country/TerritoryUnited Kingdom
CityCardiff
Period07/9/307/9/7

Keywords

  • Emission of terahertz radiations
  • Grating gates device
  • HEMT
  • Plasma waves

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