Encapsulation of atomic-scale Bi wires in epitaxial silicon without loss of structure

Osami Sakata, Wataru Yashiro, D. R. Bowler, Akiko Kitano, Kunihiro Sakamoto, Kazushi Miki

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We demonstrate, using x-ray diffraction, that we have taken one-dimensional Bi nanolines fabricated on a Si(001) surface, and buried them in crystalline silicon while retaining both their one-dimensional characters and important aspects of their structure. In particular, after burial, the nanolines retain the two-by periodicity associated with their surface structure along their length. We have used density functional theory calculations to model a structure for these buried nanolines, whose minimum length can be estimated to be 100 nm from the coherence length of the x-ray measurements.

Original languageEnglish
Article number121407
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - 2005 Sept 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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