Endurance characteristics of flash EEPROMs

Tetsuo Endoh, Fujio Masuoka

Research output: Contribution to journalArticlepeer-review


Recently, the development of flash EEPROMs, a promising next-generation device, has been widely pursued. However, the recent EEPROMs have limited endurance. In this study, the degradation of the write/erase characteristic in conventional operation was investigated and a new cell design rule for a high reliability EEPROM was established. As a result, it was found that the endurance could be extended by a factor of 100.

Original languageEnglish
Pages (from-to)88-95
Number of pages8
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Issue number1
Publication statusPublished - 1997 Jan


  • Data rewrite characteristic
  • Flash EEPROM
  • Sub-breakdown
  • Tunnel oxide


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