Energy saving in semiconductor fabs by using vacuum insulator

Takahiro Ohmura; Osamu Suenaga; Tadahiro Ohmi; Mitsushi Wadasako; Tomohiro Ohta; Shigetoshi Sugawa

doi:10.1109/ISSM.2001.963019

Energy saving in semiconductor fabs by using vacuum insulator

Takahiro Ohmura, Osamu Suenaga, Tadahiro Ohmi, Mitsushi Wadasako, Tomohiro Ohta, Shigetoshi Sugawa

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

Abstract

This paper describes the heat insulation of newly developed vacuum insulators of vertical furnaces for 300mm silicon wafer oxidation process. The thermal conductivities of several core materials at low vacuum (0.1Pa) showed about 1/3 those measured at an atmospheric pressure. The new insulator consists of a metal casing and a core material of heat resistant type that is enclosed in the former tightly enough to maintain the vacuum state once established. The amount of heat radiation from the vertical furnace equipped with the vacuum insulator thus developed is experimentally found to be less than 1/4 of the conventional system. This means that the amount of energy transfer to clean room air could be reduced to less than 1/4 that of the present casing by employment of the vacuum insulator packed with the core materials.

Original language	English
Article number	115
Pages (from-to)	477-480
Number of pages	4
Journal	IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
DOIs	https://doi.org/10.1109/ISSM.2001.963019
Publication status	Published - 2001

Keywords

Cooling cost
Cyclic heat method
Energy saving
Thermal conductivity
Vacuum insulator
Vertical furnace

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10.1109/ISSM.2001.963019

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@article{d9060159d4fd44a783b22776f04e24d6,

title = "Energy saving in semiconductor fabs by using vacuum insulator",

abstract = "This paper describes the heat insulation of newly developed vacuum insulators of vertical furnaces for 300mm silicon wafer oxidation process. The thermal conductivities of several core materials at low vacuum (0.1Pa) showed about 1/3 those measured at an atmospheric pressure. The new insulator consists of a metal casing and a core material of heat resistant type that is enclosed in the former tightly enough to maintain the vacuum state once established. The amount of heat radiation from the vertical furnace equipped with the vacuum insulator thus developed is experimentally found to be less than 1/4 of the conventional system. This means that the amount of energy transfer to clean room air could be reduced to less than 1/4 that of the present casing by employment of the vacuum insulator packed with the core materials.",

keywords = "Cooling cost, Cyclic heat method, Energy saving, Thermal conductivity, Vacuum insulator, Vertical furnace",

author = "Takahiro Ohmura and Osamu Suenaga and Tadahiro Ohmi and Mitsushi Wadasako and Tomohiro Ohta and Shigetoshi Sugawa",

year = "2001",

doi = "10.1109/ISSM.2001.963019",

language = "English",

pages = "477--480",

journal = "IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings",

issn = "1523-553X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Energy saving in semiconductor fabs by using vacuum insulator

AU - Ohmura, Takahiro

AU - Suenaga, Osamu

AU - Ohmi, Tadahiro

AU - Wadasako, Mitsushi

AU - Ohta, Tomohiro

AU - Sugawa, Shigetoshi

PY - 2001

Y1 - 2001

N2 - This paper describes the heat insulation of newly developed vacuum insulators of vertical furnaces for 300mm silicon wafer oxidation process. The thermal conductivities of several core materials at low vacuum (0.1Pa) showed about 1/3 those measured at an atmospheric pressure. The new insulator consists of a metal casing and a core material of heat resistant type that is enclosed in the former tightly enough to maintain the vacuum state once established. The amount of heat radiation from the vertical furnace equipped with the vacuum insulator thus developed is experimentally found to be less than 1/4 of the conventional system. This means that the amount of energy transfer to clean room air could be reduced to less than 1/4 that of the present casing by employment of the vacuum insulator packed with the core materials.

AB - This paper describes the heat insulation of newly developed vacuum insulators of vertical furnaces for 300mm silicon wafer oxidation process. The thermal conductivities of several core materials at low vacuum (0.1Pa) showed about 1/3 those measured at an atmospheric pressure. The new insulator consists of a metal casing and a core material of heat resistant type that is enclosed in the former tightly enough to maintain the vacuum state once established. The amount of heat radiation from the vertical furnace equipped with the vacuum insulator thus developed is experimentally found to be less than 1/4 of the conventional system. This means that the amount of energy transfer to clean room air could be reduced to less than 1/4 that of the present casing by employment of the vacuum insulator packed with the core materials.

KW - Cooling cost

KW - Cyclic heat method

KW - Energy saving

KW - Thermal conductivity

KW - Vacuum insulator

KW - Vertical furnace

UR - http://www.scopus.com/inward/record.url?scp=0035169594&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035169594&partnerID=8YFLogxK

U2 - 10.1109/ISSM.2001.963019

DO - 10.1109/ISSM.2001.963019

M3 - Article

AN - SCOPUS:0035169594

SN - 1523-553X

SP - 477

EP - 480

JO - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

JF - IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

M1 - 115

ER -

Energy saving in semiconductor fabs by using vacuum insulator

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