TY - JOUR
T1 - Enhanced curie temperature and high heat resistivity of PMnN-PZT monocrystalline thin film on Si
AU - Yoshida, Shinya
AU - Hanzawa, Hiroaki
AU - Wasa, Kiyotaka
AU - Tanaka, Shuji
N1 - Funding Information:
This work was supported by MST, the Asashi Glass Foundation , and Grant in Aid for Scientific Research from the Japanese Ministry of Education, Culture, Sports, Science and Technology (MEXT) . We would like to express sincere gratitude toward Prof. Funakubo of Tokyo Institute of Technology, Japan.
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - In this study, a c-axis-oriented PMnN-PZT monocrystalline thin film was sputter-deposited on a Si substrate covered with buffer layers. Curie temperature, Tc, was estimated by investigating the temperature variation of the piezoelectric, dielectric, and ferroelectric properties and the crystalline lattice. Estimated Tc is at least 150 °C higher than those of the bulk ceramics. The enhanced Tc is possibly caused by a strong interaction between the thin film and the Si substrate. The piezoelectric and ferroelectric properties were measured before and after heating to >600 °C, and no significant differences were observed, demonstrating excellent heat resistivity. The results of this study give a better material option for high-temperature piezoelectric MEMS.
AB - In this study, a c-axis-oriented PMnN-PZT monocrystalline thin film was sputter-deposited on a Si substrate covered with buffer layers. Curie temperature, Tc, was estimated by investigating the temperature variation of the piezoelectric, dielectric, and ferroelectric properties and the crystalline lattice. Estimated Tc is at least 150 °C higher than those of the bulk ceramics. The enhanced Tc is possibly caused by a strong interaction between the thin film and the Si substrate. The piezoelectric and ferroelectric properties were measured before and after heating to >600 °C, and no significant differences were observed, demonstrating excellent heat resistivity. The results of this study give a better material option for high-temperature piezoelectric MEMS.
KW - Curie temperature
KW - Lead zirconate titanate (PZT)
KW - MEMS (Micro-electro mechanical systems)
KW - PZT-based monocrystalline thin film on Si
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U2 - 10.1016/j.sna.2016.10.009
DO - 10.1016/j.sna.2016.10.009
M3 - Article
AN - SCOPUS:84992046705
SN - 0924-4247
VL - 251
SP - 100
EP - 107
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
ER -