Enhanced diffusion of boron in silicon by cw CO2 laser irradiation

H. Yamada-Kaneta; K. Tanahashi; K. Kakimoto; S. Suto

doi:10.1002/sia.2411

Enhanced diffusion of boron in silicon by cw CO₂ laser irradiation

H. Yamada-Kaneta, K. Tanahashi, K. Kakimoto, S. Suto

Fujitsu

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the diffusion of boron (B) by the irradiation with cw CO₂ laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O₂ ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.

Original language	English
Pages (from-to)	1683-1686
Number of pages	4
Journal	Surface and Interface Analysis
Volume	38
Issue number	12-13
DOIs	https://doi.org/10.1002/sia.2411
Publication status	Published - 2006 Dec

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title = "Enhanced diffusion of boron in silicon by cw CO2 laser irradiation",

abstract = "We investigated the diffusion of boron (B) by the irradiation with cw CO2 laser light. The enhanced diffusion of B was observed by irradiating with the laser light during annealing in Ar/O2 ambient. We found that irradiation with laser light had the effect of enhancement on the growth of the oxide layer. The possible mechanism is that the excess self-interstitials injected by oxidation at the laser-irradiated point enhance the diffusion of B.",

author = "H. Yamada-Kaneta and K. Tanahashi and K. Kakimoto and S. Suto",

year = "2006",

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AU - Kakimoto, K.

AU - Suto, S.

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Enhanced diffusion of boron in silicon by cw CO₂ laser irradiation

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