TY - JOUR
T1 - Enhanced gate swing in InP HEMTs with high threshold voltage by means of InAlAsSb barrier
AU - Suemitsu, Tetsuya
AU - Yokoyama, Haruki
AU - Sugiyama, Hiroki
AU - Tokumitsu, Masami
PY - 2007/8
Y1 - 2007/8
N2 - We demonstrated the suitability of the InP HEMTs with the InAlAsSb Schottky barrier to realize the high threshold voltage (enhancement mode), low gate current, and low power consumption. This quaternary compound material increases the conduction band discontinuity to the InGaAs channel by introducing only 10% of antimony to InAlAs. The gate current is reduced by an order of the magnitude (or even more) at gate voltage range from 0.4 to 0.8 V. On the other hand, the large conduction band discontinuity causes larger parasitic source and drain resistance, which decreases the extrinsic transconductance. Nevertheless, the high-frequency performance is comparable to the device with the conventional InAlAs barrier layer. Therefore, the InAlAsSb barrier is a promising option for logic applications, which requires reduced gate current.
AB - We demonstrated the suitability of the InP HEMTs with the InAlAsSb Schottky barrier to realize the high threshold voltage (enhancement mode), low gate current, and low power consumption. This quaternary compound material increases the conduction band discontinuity to the InGaAs channel by introducing only 10% of antimony to InAlAs. The gate current is reduced by an order of the magnitude (or even more) at gate voltage range from 0.4 to 0.8 V. On the other hand, the large conduction band discontinuity causes larger parasitic source and drain resistance, which decreases the extrinsic transconductance. Nevertheless, the high-frequency performance is comparable to the device with the conventional InAlAs barrier layer. Therefore, the InAlAsSb barrier is a promising option for logic applications, which requires reduced gate current.
KW - FETs
KW - Gate current
KW - High frequency
KW - High-electron mobility transistors (HEMTs)
UR - http://www.scopus.com/inward/record.url?scp=34547814177&partnerID=8YFLogxK
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U2 - 10.1109/LED.2007.901269
DO - 10.1109/LED.2007.901269
M3 - Article
AN - SCOPUS:34547814177
SN - 0741-3106
VL - 28
SP - 669
EP - 671
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 8
ER -