Enhanced inverse spin Hall contribution at high microwave power levels in La0.67Sr0.33MnO3/SrRuO3 epitaxial bilayers

S. M. Haidar; Y. Shiomi; J. Lustikova; E. Saitoh

doi:10.1063/1.4933379

Enhanced inverse spin Hall contribution at high microwave power levels in La_0.67Sr_0.33MnO₃/SrRuO₃ epitaxial bilayers

S. M. Haidar, Y. Shiomi, J. Lustikova, E. Saitoh

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have investigated microwave power dependence of dc voltage generated upon ferromagnetic resonance in a La_0.67Sr_0.33MnO₃/SrRuO₃ epitaxial bilayer film at room temperature. With increasing microwave power above ∼75 mW, the magnitude of the voltage signal decreases as the sample temperature approaches the Curie temperature of La_0.67Sr_0.33MnO₃ due to heating effects. By analyzing the dependence of the voltage signal on the direction of the magnetic field, we show that with increasing microwave power the contribution from the inverse spin Hall effect becomes more dominant than that from the anisotropic magnetoresistance effect.

Original language	English
Article number	152408
Journal	Applied Physics Letters
Volume	107
Issue number	15
DOIs	https://doi.org/10.1063/1.4933379
Publication status	Published - 2015 Oct 12

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4933379

Cite this

@article{4431f7d35ec5428cbab948090c86f0a1,

title = "Enhanced inverse spin Hall contribution at high microwave power levels in La0.67Sr0.33MnO3/SrRuO3 epitaxial bilayers",

abstract = "We have investigated microwave power dependence of dc voltage generated upon ferromagnetic resonance in a La0.67Sr0.33MnO3/SrRuO3 epitaxial bilayer film at room temperature. With increasing microwave power above ∼75 mW, the magnitude of the voltage signal decreases as the sample temperature approaches the Curie temperature of La0.67Sr0.33MnO3 due to heating effects. By analyzing the dependence of the voltage signal on the direction of the magnetic field, we show that with increasing microwave power the contribution from the inverse spin Hall effect becomes more dominant than that from the anisotropic magnetoresistance effect.",

author = "Haidar, {S. M.} and Y. Shiomi and J. Lustikova and E. Saitoh",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = oct,

day = "12",

doi = "10.1063/1.4933379",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Enhanced inverse spin Hall contribution at high microwave power levels in La0.67Sr0.33MnO3/SrRuO3 epitaxial bilayers

AU - Haidar, S. M.

AU - Shiomi, Y.

AU - Lustikova, J.

AU - Saitoh, E.

PY - 2015/10/12

Y1 - 2015/10/12

N2 - We have investigated microwave power dependence of dc voltage generated upon ferromagnetic resonance in a La0.67Sr0.33MnO3/SrRuO3 epitaxial bilayer film at room temperature. With increasing microwave power above ∼75 mW, the magnitude of the voltage signal decreases as the sample temperature approaches the Curie temperature of La0.67Sr0.33MnO3 due to heating effects. By analyzing the dependence of the voltage signal on the direction of the magnetic field, we show that with increasing microwave power the contribution from the inverse spin Hall effect becomes more dominant than that from the anisotropic magnetoresistance effect.

AB - We have investigated microwave power dependence of dc voltage generated upon ferromagnetic resonance in a La0.67Sr0.33MnO3/SrRuO3 epitaxial bilayer film at room temperature. With increasing microwave power above ∼75 mW, the magnitude of the voltage signal decreases as the sample temperature approaches the Curie temperature of La0.67Sr0.33MnO3 due to heating effects. By analyzing the dependence of the voltage signal on the direction of the magnetic field, we show that with increasing microwave power the contribution from the inverse spin Hall effect becomes more dominant than that from the anisotropic magnetoresistance effect.

UR - http://www.scopus.com/inward/record.url?scp=84944710776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944710776&partnerID=8YFLogxK

U2 - 10.1063/1.4933379

DO - 10.1063/1.4933379

M3 - Article

AN - SCOPUS:84944710776

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152408

ER -

Enhanced inverse spin Hall contribution at high microwave power levels in La_0.67Sr_0.33MnO₃/SrRuO₃ epitaxial bilayers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this