Enhanced inverse spin-Hall voltage in (001) oriented Fe4N/Pt polycrystalline films without contribution of planar-Hall effect

In this study, the output DC electric voltage (V_out) generated by a Pt-capped Fe₄N bilayer film (Fe₄N/Pt) under ferromagnetic resonance conditions at room temperature was assessed. The contributions from the inverse spin-Hall effect (ISHE), the planar-Hall effect (PHE) and the anomalous- Hall effect (AHE) were separated from the output voltage by analysis of V_out values determined at varying external field polar angles. The results showed that the polarity of the ISHE (V_ISHE) component of V_out was opposite to that of the PHE (V_PHE). As a result, the magnitude of the intrinsic V_ISHE was beyond V_out by as much as the magnitude of V_PHE. The X-ray diffraction structural analysis revealed the polycrystal of the Fe₄ N/Pt with (001) orientation, which might be one of the possible mechanisms for enhanced intrinsic V_ISHE.