Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

Arnold Alguno; Noritaka Usami; Toru Ujihara; Kozo Fujiwara; Gen Sazaki; Kazuo Nakajima; Yasuhiro Shiraki

doi:10.1063/1.1600838

Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

Arnold Alguno, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima, Yasuhiro Shiraki

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

102 Citations (Scopus)

Abstract

The performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode was reported. The dots were grown epitaxially on p-type Si(100) substrate via the Stranski-Krastanov growth mode by gas-source molecular beam epitaxy. The results obtained showed that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces.

Original language	English
Pages (from-to)	1258-1260
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.1600838
Publication status	Published - 2003 Aug 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1600838

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abstract = "The performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode was reported. The dots were grown epitaxially on p-type Si(100) substrate via the Stranski-Krastanov growth mode by gas-source molecular beam epitaxy. The results obtained showed that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces.",

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AU - Alguno, Arnold

AU - Usami, Noritaka

AU - Ujihara, Toru

AU - Fujiwara, Kozo

AU - Sazaki, Gen

AU - Nakajima, Kazuo

AU - Shiraki, Yasuhiro

PY - 2003/8/11

Y1 - 2003/8/11

N2 - The performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode was reported. The dots were grown epitaxially on p-type Si(100) substrate via the Stranski-Krastanov growth mode by gas-source molecular beam epitaxy. The results obtained showed that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces.

AB - The performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode was reported. The dots were grown epitaxially on p-type Si(100) substrate via the Stranski-Krastanov growth mode by gas-source molecular beam epitaxy. The results obtained showed that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

Abstract

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