The performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode was reported. The dots were grown epitaxially on p-type Si(100) substrate via the Stranski-Krastanov growth mode by gas-source molecular beam epitaxy. The results obtained showed that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Aug 11|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)