Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

Takeshi Fujisawa; Masakazu Arai; Takaaki Kakitsuka; Takayuki Yamanaka; Yasuhiro Kondo; Hiroshi Yasaka

doi:10.1143/APEX.1.041203

Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

Takeshi Fujisawa, Masakazu Arai, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

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Abstract

Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.

Original language	English
Pages (from-to)	412031-412033
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	4
DOIs	https://doi.org/10.1143/APEX.1.041203
Publication status	Published - 2008 Apr

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abstract = "Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.",

author = "Takeshi Fujisawa and Masakazu Arai and Takaaki Kakitsuka and Takayuki Yamanaka and Yasuhiro Kondo and Hiroshi Yasaka",

year = "2008",

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T1 - Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

AU - Fujisawa, Takeshi

AU - Arai, Masakazu

AU - Kakitsuka, Takaaki

AU - Yamanaka, Takayuki

AU - Kondo, Yasuhiro

AU - Yasaka, Hiroshi

PY - 2008/4

Y1 - 2008/4

N2 - Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.

AB - Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.

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JO - Applied Physics Express

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Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

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