Enhancement of boron diffusion in silicon by continuous wave CO2 laser irradiation

Hiroshi Yamada-Kaneta; Katsuto Tanahashi; Koichi Kakimoto; Shozo Suto

doi:10.1143/JJAP.46.5085

Enhancement of boron diffusion in silicon by continuous wave CO₂ laser irradiation

Hiroshi Yamada-Kaneta, Katsuto Tanahashi, Koichi Kakimoto, Shozo Suto

Institute for Excellence in Higher Education (IEHE) (organization affiliation only)

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the diffusion of boron (B) by the irradiation of cw CO ₂ laser light. The diffusion of B was enhanced by irradiating the laser light during annealing in Ar/O₂ambient. It was found that the irradiation of the laser light had the effect of enhances on the growth of an oxide layer. The possible mechanism of the enhanced diffusion is that the excess self-interstitials injected by oxidation at a laser-irradiated point assist the diffusion of B.

Original language	English
Pages (from-to)	5085-5088
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	8 A
DOIs	https://doi.org/10.1143/JJAP.46.5085
Publication status	Published - 2007 Aug 6

Keywords

Boron
CO laser
Diffusion
Oxidation
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.5085

Cite this

@article{961ba6bfc5a8455db41ab509c6b8cd1e,

title = "Enhancement of boron diffusion in silicon by continuous wave CO2 laser irradiation",

abstract = "We investigated the diffusion of boron (B) by the irradiation of cw CO 2 laser light. The diffusion of B was enhanced by irradiating the laser light during annealing in Ar/O2ambient. It was found that the irradiation of the laser light had the effect of enhances on the growth of an oxide layer. The possible mechanism of the enhanced diffusion is that the excess self-interstitials injected by oxidation at a laser-irradiated point assist the diffusion of B.",

keywords = "Boron, CO laser, Diffusion, Oxidation, Silicon",

author = "Hiroshi Yamada-Kaneta and Katsuto Tanahashi and Koichi Kakimoto and Shozo Suto",

year = "2007",

month = aug,

day = "6",

doi = "10.1143/JJAP.46.5085",

language = "English",

volume = "46",

pages = "5085--5088",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8 A",

}

TY - JOUR

T1 - Enhancement of boron diffusion in silicon by continuous wave CO2 laser irradiation

AU - Yamada-Kaneta, Hiroshi

AU - Tanahashi, Katsuto

AU - Kakimoto, Koichi

AU - Suto, Shozo

PY - 2007/8/6

Y1 - 2007/8/6

N2 - We investigated the diffusion of boron (B) by the irradiation of cw CO 2 laser light. The diffusion of B was enhanced by irradiating the laser light during annealing in Ar/O2ambient. It was found that the irradiation of the laser light had the effect of enhances on the growth of an oxide layer. The possible mechanism of the enhanced diffusion is that the excess self-interstitials injected by oxidation at a laser-irradiated point assist the diffusion of B.

AB - We investigated the diffusion of boron (B) by the irradiation of cw CO 2 laser light. The diffusion of B was enhanced by irradiating the laser light during annealing in Ar/O2ambient. It was found that the irradiation of the laser light had the effect of enhances on the growth of an oxide layer. The possible mechanism of the enhanced diffusion is that the excess self-interstitials injected by oxidation at a laser-irradiated point assist the diffusion of B.

KW - Boron

KW - CO laser

KW - Diffusion

KW - Oxidation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=34547884683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547884683&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.5085

DO - 10.1143/JJAP.46.5085

M3 - Article

AN - SCOPUS:34547884683

SN - 0021-4922

VL - 46

SP - 5085

EP - 5088

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 8 A

ER -