Enhancement of current-perpendicular-to-plane giant magnetoresistance by synthetic antiferromagnet free layers in single spin-valve films

Y. Jiang; S. Abe; T. Nozaki; N. Tezuka; K. Inomata

doi:10.1063/1.1616974

Enhancement of current-perpendicular-to-plane giant magnetoresistance by synthetic antiferromagnet free layers in single spin-valve films

Y. Jiang, S. Abe, T. Nozaki, N. Tezuka, K. Inomata

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The enhancement of current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) by synthetic antiferromagnet (SyAF) free layers in single spin-valve (SPV) films was studied. It was demonstrated that SyAFs as free layers dramatically enhance the CPP-GMR ratio from 0.83% to 3.56% at room temperature and double the resistance-area product in single SPV films. An experimental and single-domain thermal activation modeling study of magnetic switching behavior showed that the CPP-GMR SPV with SyAF structure approaches that of a single-domain magnet even with low aspect ratio of 1 as long as its size diminishes to ∼0.18 μm².

Original language	English
Pages (from-to)	2874-2876
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	14
DOIs	https://doi.org/10.1063/1.1616974
Publication status	Published - 2003 Oct 6

Access to Document

10.1063/1.1616974

Cite this

@article{182cde92f4784f53888a0bfae2a34094,

title = "Enhancement of current-perpendicular-to-plane giant magnetoresistance by synthetic antiferromagnet free layers in single spin-valve films",

abstract = "The enhancement of current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) by synthetic antiferromagnet (SyAF) free layers in single spin-valve (SPV) films was studied. It was demonstrated that SyAFs as free layers dramatically enhance the CPP-GMR ratio from 0.83% to 3.56% at room temperature and double the resistance-area product in single SPV films. An experimental and single-domain thermal activation modeling study of magnetic switching behavior showed that the CPP-GMR SPV with SyAF structure approaches that of a single-domain magnet even with low aspect ratio of 1 as long as its size diminishes to ∼0.18 μm2.",

author = "Y. Jiang and S. Abe and T. Nozaki and N. Tezuka and K. Inomata",

year = "2003",

month = oct,

day = "6",

doi = "10.1063/1.1616974",

language = "English",

volume = "83",

pages = "2874--2876",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Enhancement of current-perpendicular-to-plane giant magnetoresistance by synthetic antiferromagnet free layers in single spin-valve films

AU - Jiang, Y.

AU - Abe, S.

AU - Nozaki, T.

AU - Tezuka, N.

AU - Inomata, K.

PY - 2003/10/6

Y1 - 2003/10/6

N2 - The enhancement of current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) by synthetic antiferromagnet (SyAF) free layers in single spin-valve (SPV) films was studied. It was demonstrated that SyAFs as free layers dramatically enhance the CPP-GMR ratio from 0.83% to 3.56% at room temperature and double the resistance-area product in single SPV films. An experimental and single-domain thermal activation modeling study of magnetic switching behavior showed that the CPP-GMR SPV with SyAF structure approaches that of a single-domain magnet even with low aspect ratio of 1 as long as its size diminishes to ∼0.18 μm2.

AB - The enhancement of current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) by synthetic antiferromagnet (SyAF) free layers in single spin-valve (SPV) films was studied. It was demonstrated that SyAFs as free layers dramatically enhance the CPP-GMR ratio from 0.83% to 3.56% at room temperature and double the resistance-area product in single SPV films. An experimental and single-domain thermal activation modeling study of magnetic switching behavior showed that the CPP-GMR SPV with SyAF structure approaches that of a single-domain magnet even with low aspect ratio of 1 as long as its size diminishes to ∼0.18 μm2.

UR - http://www.scopus.com/inward/record.url?scp=0142198456&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142198456&partnerID=8YFLogxK

U2 - 10.1063/1.1616974

DO - 10.1063/1.1616974

M3 - Article

AN - SCOPUS:0142198456

SN - 0003-6951

VL - 83

SP - 2874

EP - 2876

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Enhancement of current-perpendicular-to-plane giant magnetoresistance by synthetic antiferromagnet free layers in single spin-valve films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this