Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation

M. Ichikawa; N. Eboshi; T. Kemmochi; M. Sano; T. Mukai; M. Uomoto; T. Shimatsu

doi:10.23919/LTB-3D.2017.7947402

Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation

M. Ichikawa, N. Eboshi, T. Kemmochi, M. Sano, T. Mukai, M. Uomoto, T. Shimatsu

Advanced Interdisciplinary Research Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.

Original language	English
Title of host publication	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	6
Number of pages	1
ISBN (Electronic)	9784904743034
DOIs	https://doi.org/10.23919/LTB-3D.2017.7947402
Publication status	Published - 2017 Jun 13
Event	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan Duration: 2017 May 16 → 2017 May 18

Publication series

Name	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Country/Territory	Japan
City	Tokyo
Period	17/5/16 → 17/5/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

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10.23919/LTB-3D.2017.7947402

Cite this

Ichikawa, M., Eboshi, N., Kemmochi, T., Sano, M., Mukai, T., Uomoto, M., & Shimatsu, T. (2017). Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 6). [7947402] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947402

Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation. / Ichikawa, M.; Eboshi, N.; Kemmochi, T. et al.

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 6 7947402 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ichikawa, M, Eboshi, N, Kemmochi, T, Sano, M, Mukai, T, Uomoto, M & Shimatsu, T 2017, Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947402, Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Institute of Electrical and Electronics Engineers Inc., pp. 6, 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 17/5/16. https://doi.org/10.23919/LTB-3D.2017.7947402

Ichikawa M, Eboshi N, Kemmochi T, Sano M, Mukai T, Uomoto M et al. Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 6. 7947402. (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). doi: 10.23919/LTB-3D.2017.7947402

Ichikawa, M. ; Eboshi, N. ; Kemmochi, T. et al. / Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation. Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 6 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

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author = "M. Ichikawa and N. Eboshi and T. Kemmochi and M. Sano and T. Mukai and M. Uomoto and T. Shimatsu",

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AB - Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer by subsequent laser irradiation, which enhances the light transmittance through the bonded interface.

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Enhancement of light transmittance for wafers bonded with thin Al films using atomic diffusion bonding and subsequent laser irradiation

Abstract

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