Enhancement of Rashba spin-orbit interaction due to wave function engineering

Y. Kunihashi; M. Kohda; J. Nitta

doi:10.1007/s10948-009-0579-1

Enhancement of Rashba spin-orbit interaction due to wave function engineering

Y. Kunihashi, M. Kohda, J. Nitta

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have demonstrated an enhancement of Rashba spin-orbit interaction (SOI) in In _0.53Ga _0.47As/In _0.7Ga _0.3As/ In _0.53Ga _0.47As double-step structure in comparison with In _0.53Ga _0.47As normal quantum well. In the double-step structure, high electron probability density is located on the In _0.53Ga _0.47As/In _0.7Ga _0.3As heterointerface to enhance the interface contribution of Rashba SOI. The double-step structure is designed based on k̇p formalism considering field and interface contributions separately. The Rashba parameter α calculated by the k̇p formalism shows good agreement with the experimental value by analyzing weak antilocalization. The large carrier density dependence of α is due to the In _0.53Ga _0.47As/In _0.7Ga _0.3As heterointerface contribution as well as the energy-band bending in the In _0.7Ga _0.3As quantum well. The results of this study suggest that the precise control of interface and field contributions in Rashba SOI will make its application to semiconductor spintronics.

Original language	English
Pages (from-to)	49-52
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	23
Issue number	1
DOIs	https://doi.org/10.1007/s10948-009-0579-1
Publication status	Published - 2010 Jan

Keywords

Quantum well
Spin-orbit interaction
Spintronics

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@article{a73131e815c94c18b5def64b67833753,

title = "Enhancement of Rashba spin-orbit interaction due to wave function engineering",

abstract = "We have demonstrated an enhancement of Rashba spin-orbit interaction (SOI) in In 0.53Ga 0.47As/In 0.7Ga 0.3As/ In 0.53Ga 0.47As double-step structure in comparison with In 0.53Ga 0.47As normal quantum well. In the double-step structure, high electron probability density is located on the In 0.53Ga 0.47As/In 0.7Ga 0.3As heterointerface to enhance the interface contribution of Rashba SOI. The double-step structure is designed based on {\.k}p formalism considering field and interface contributions separately. The Rashba parameter α calculated by the {\.k}p formalism shows good agreement with the experimental value by analyzing weak antilocalization. The large carrier density dependence of α is due to the In 0.53Ga 0.47As/In 0.7Ga 0.3As heterointerface contribution as well as the energy-band bending in the In 0.7Ga 0.3As quantum well. The results of this study suggest that the precise control of interface and field contributions in Rashba SOI will make its application to semiconductor spintronics.",

keywords = "Quantum well, Spin-orbit interaction, Spintronics",

author = "Y. Kunihashi and M. Kohda and J. Nitta",

note = "Funding Information: Acknowledgements This work was partly supported by Grant-in-Aids for Scientific Research, PRESTO of Japan Science Agency, and the Mitsubishi Foundation. This work has been partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.",

year = "2010",

month = jan,

doi = "10.1007/s10948-009-0579-1",

language = "English",

volume = "23",

pages = "49--52",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Enhancement of Rashba spin-orbit interaction due to wave function engineering

AU - Kunihashi, Y.

AU - Kohda, M.

AU - Nitta, J.

N1 - Funding Information: Acknowledgements This work was partly supported by Grant-in-Aids for Scientific Research, PRESTO of Japan Science Agency, and the Mitsubishi Foundation. This work has been partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.

PY - 2010/1

Y1 - 2010/1

N2 - We have demonstrated an enhancement of Rashba spin-orbit interaction (SOI) in In 0.53Ga 0.47As/In 0.7Ga 0.3As/ In 0.53Ga 0.47As double-step structure in comparison with In 0.53Ga 0.47As normal quantum well. In the double-step structure, high electron probability density is located on the In 0.53Ga 0.47As/In 0.7Ga 0.3As heterointerface to enhance the interface contribution of Rashba SOI. The double-step structure is designed based on k̇p formalism considering field and interface contributions separately. The Rashba parameter α calculated by the k̇p formalism shows good agreement with the experimental value by analyzing weak antilocalization. The large carrier density dependence of α is due to the In 0.53Ga 0.47As/In 0.7Ga 0.3As heterointerface contribution as well as the energy-band bending in the In 0.7Ga 0.3As quantum well. The results of this study suggest that the precise control of interface and field contributions in Rashba SOI will make its application to semiconductor spintronics.

AB - We have demonstrated an enhancement of Rashba spin-orbit interaction (SOI) in In 0.53Ga 0.47As/In 0.7Ga 0.3As/ In 0.53Ga 0.47As double-step structure in comparison with In 0.53Ga 0.47As normal quantum well. In the double-step structure, high electron probability density is located on the In 0.53Ga 0.47As/In 0.7Ga 0.3As heterointerface to enhance the interface contribution of Rashba SOI. The double-step structure is designed based on k̇p formalism considering field and interface contributions separately. The Rashba parameter α calculated by the k̇p formalism shows good agreement with the experimental value by analyzing weak antilocalization. The large carrier density dependence of α is due to the In 0.53Ga 0.47As/In 0.7Ga 0.3As heterointerface contribution as well as the energy-band bending in the In 0.7Ga 0.3As quantum well. The results of this study suggest that the precise control of interface and field contributions in Rashba SOI will make its application to semiconductor spintronics.

KW - Quantum well

KW - Spin-orbit interaction

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=73349088423&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73349088423&partnerID=8YFLogxK

U2 - 10.1007/s10948-009-0579-1

DO - 10.1007/s10948-009-0579-1

M3 - Article

AN - SCOPUS:73349088423

SN - 1557-1939

VL - 23

SP - 49

EP - 52

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 1

ER -

Enhancement of Rashba spin-orbit interaction due to wave function engineering

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