Enhancement of spin-asymmetry by L21 -ordering in Co 2MnSi/Cr/Co2MnSi current-perpendicular-to-plane magnetoresistance devices

Y. Sakuraba; T. Iwase; K. Saito; S. Mitani; K. Takanashi

doi:10.1063/1.3068492

Enhancement of spin-asymmetry by L₂1 -ordering in Co ₂MnSi/Cr/Co₂MnSi current-perpendicular-to-plane magnetoresistance devices

Y. Sakuraba, T. Iwase, K. Saito, S. Mitani, K. Takanashi

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Co2 MnSi/Cr/ Co2 MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2 MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L 21 -ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 m μ m2 were achieved by annealing at 400 °C. These results indicate that promoting the degree of L 21 -ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.

Original language	English
Article number	012511
Journal	Applied Physics Letters
Volume	94
Issue number	1
DOIs	https://doi.org/10.1063/1.3068492
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3068492

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@article{d25e74ffc32f4dbcba7381c9f035ca35,

title = "Enhancement of spin-asymmetry by L21 -ordering in Co 2MnSi/Cr/Co2MnSi current-perpendicular-to-plane magnetoresistance devices",

abstract = "Co2 MnSi/Cr/ Co2 MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2 MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L 21 -ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 m μ m2 were achieved by annealing at 400 °C. These results indicate that promoting the degree of L 21 -ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.",

author = "Y. Sakuraba and T. Iwase and K. Saito and S. Mitani and K. Takanashi",

note = "Funding Information: The authors would like to thank Y. Ando for the XRD measurements and T. Seki and K. Yakushiji for helpful comments to microfabrication. This work was supported by the Nano-Materials Functionality Creation Research Project for Young Scientists in IMR, and a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current” (Grant No. 19048004) and Young Scientists (B) (Grant No. 20760005) from MEXT, Japan.",

year = "2009",

doi = "10.1063/1.3068492",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Enhancement of spin-asymmetry by L21 -ordering in Co 2MnSi/Cr/Co2MnSi current-perpendicular-to-plane magnetoresistance devices

AU - Sakuraba, Y.

AU - Iwase, T.

AU - Saito, K.

AU - Mitani, S.

AU - Takanashi, K.

N1 - Funding Information: The authors would like to thank Y. Ando for the XRD measurements and T. Seki and K. Yakushiji for helpful comments to microfabrication. This work was supported by the Nano-Materials Functionality Creation Research Project for Young Scientists in IMR, and a Grant-in-Aid for Scientific Research in Priority Area “Creation and control of spin current” (Grant No. 19048004) and Young Scientists (B) (Grant No. 20760005) from MEXT, Japan.

PY - 2009

Y1 - 2009

N2 - Co2 MnSi/Cr/ Co2 MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2 MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L 21 -ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 m μ m2 were achieved by annealing at 400 °C. These results indicate that promoting the degree of L 21 -ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.

AB - Co2 MnSi/Cr/ Co2 MnSi (001)-fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated via an UHV magnetron sputtering system. The relationship between the degree of chemical ordering in Co2 MnSi (CMS) and the CPP-GMR characteristics was investigated systematically against the annealing temperature of the devices. X-ray diffraction profiles and reflection high-energy electron diffraction images indicated that annealing improved L 21 -ordering. The MR ratio also increased upon annealing and the maximum MR ratio of 5.2% and ΔRA of 6.5 m μ m2 were achieved by annealing at 400 °C. These results indicate that promoting the degree of L 21 -ordering in CMS enhances the bulk and/or interface spin-asymmetry coefficients.

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Enhancement of spin-asymmetry by L₂1 -ordering in Co ₂MnSi/Cr/Co₂MnSi current-perpendicular-to-plane magnetoresistance devices

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