Enhancement of spin lifetime in gate-Fitted InGaAs Narrow wires

Yoji Kunihashi, Makoto Kohda, Junsaku Nitta

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59 Citations (Scopus)


We investigated the spin lifetime in gate-fitted InGaAs narrow wires from magnetotransport measurement. Applying positive gate bias voltage, the spin lifetimes in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. This enhancement of spin lifetime in gated wires is the first experimental evidence of dimensional confinement and resonant spin-orbit interaction effect controlled by gate bias voltage. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.

Original languageEnglish
Article number226601
JournalPhysical Review Letters
Issue number22
Publication statusPublished - 2009 Jun 2


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