A DC electric voltage was generated on a Pt-capped Fe4N bilayer film (Fe4N/Pt) by inverse spin-Hall effect (ISHE) under ferromagnetic resonance (FMR) conditions at room temperature. Sign reversal of the electric voltage was observed with the application of an external DC field with opposite direction, and the magnitude of the voltage was proportional to the applied microwave power. The spin current was pumped out of the Fe4N film into the Pt capping film. The real part of the spin mixing conductance (g rdouble arrow, left up, right down sign) was quantified for Fe4N/Pt and Ni78Fe22/Pt bilayer films to investigate the spin pumping efficiency at the interface. The gr double arrow, left up, right down sign value was larger for the Fe4N/Pt film than for the Ni78Fe22/Pt film. Such a large grdouble arrow, left up, right down sign could reflect the large population of conduction electrons with minority spins in the Fe4N film compared with that with majority spins.