TY - GEN
T1 - Enhancement of weak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps
T2 - 6th International Workshop on Computational Electronics, IWCE 1998
AU - Suemitsu, Tetsuya
AU - Tomizawa, Masaaki
AU - Enoki, Takatomo
AU - Ishii, Yasunobu
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The correlation among the impact ionization, the surface traps, and the drain current degradation (kink) has been studied. The two-dimensional device simulation reveals that the increase in the surface traps at the recess region between gate and drain causes an enhancement of the weak impact ionization at low biases. This is one of the possible reasons for the kink phenomenon associated with hot-electron-induced degradation.
AB - The correlation among the impact ionization, the surface traps, and the drain current degradation (kink) has been studied. The two-dimensional device simulation reveals that the increase in the surface traps at the recess region between gate and drain causes an enhancement of the weak impact ionization at low biases. This is one of the possible reasons for the kink phenomenon associated with hot-electron-induced degradation.
UR - http://www.scopus.com/inward/record.url?scp=85051770288&partnerID=8YFLogxK
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U2 - 10.1109/IWCE.1998.742758
DO - 10.1109/IWCE.1998.742758
M3 - Conference contribution
AN - SCOPUS:85051770288
T3 - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
SP - 250
EP - 253
BT - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 19 October 1998 through 21 October 1998
ER -