Enhancement type InP metal-insulator-semiconductor field-effect transistor with plasma anodic aluminium oxide as the gate insulator

Physics

• Electron Mobility 25%
• Insulators 100%
• Metal 50%
• Semiconductor 50%

Engineering

• Aluminum Oxide 50%
• Current Drain 25%
• Enhancement 50%
• Field-Effect Transistor 50%
• Gate Voltage 25%
• Surfaces 25%

Material Science

• Electron Mobility 25%
• Semiconductor Material 50%
• Surface 25%