Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Kazuhiko Endo; Shin Ichi O'uchi; Yuki Ishikawa; Yongxum Liu; Takashi Matsukawa; Meishoku Masahara; Kunihiro Sakamoto; Junichi Tsukada; Kenichi Ishii; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1143/APEX.2.054502

Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V _th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the V_th of the pass gates.

Original language	English
Article number	054502
Journal	Applied Physics Express
Volume	2
Issue number	5
DOIs	https://doi.org/10.1143/APEX.2.054502
Publication status	Published - 2009 May

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Endo, K., O'uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Masahara, M., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., & Suzuki, E. (2009). Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates. Applied Physics Express, 2(5), Article 054502. https://doi.org/10.1143/APEX.2.054502

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abstract = "We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.",

author = "Kazuhiko Endo and O'uchi, {Shin Ichi} and Yuki Ishikawa and Yongxum Liu and Takashi Matsukawa and Meishoku Masahara and Kunihiro Sakamoto and Junichi Tsukada and Kenichi Ishii and Hiromi Yamauchi and Eiichi Suzuki",

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doi = "10.1143/APEX.2.054502",

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Endo, K, O'uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Masahara, M, Sakamoto, K, Tsukada, J, Ishii, K, Yamauchi, H & Suzuki, E 2009, 'Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates', Applied Physics Express, vol. 2, no. 5, 054502. https://doi.org/10.1143/APEX.2.054502

TY - JOUR

T1 - Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

AU - Endo, Kazuhiko

AU - O'uchi, Shin Ichi

AU - Ishikawa, Yuki

AU - Liu, Yongxum

AU - Matsukawa, Takashi

AU - Masahara, Meishoku

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

AU - Ishii, Kenichi

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

PY - 2009/5

Y1 - 2009/5

N2 - We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.

AB - We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.

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Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

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