Enhancing noise margins of finFET SRAM by integrating vth- controllable flexible-pass-gates

Kazuhiko Endo; Shin Ichi O'Uchi; Yuki Ishikawa; Yongxum Liu; Takashi Matsukawa; Meishoku Masahara; Kunihiro Sakamoto; Junichi Tsukada; Kenichi Ishii; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1109/ESSDERC.2008.4681720

Enhancing noise margins of finFET SRAM by integrating v_th- controllable flexible-pass-gates

Kazuhiko Endo, Shin Ichi O'Uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

We propose a flexible-pass-gate (Flex-PG) FinFET SRAM to enhance both the read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual FinFETs while its pass gates consist of V_th- controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both the read and write margins by controlling the V_th of the pass gates.

Original language	English
Title of host publication	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	146-149
Number of pages	4
ISBN (Print)	9781424423644
DOIs	https://doi.org/10.1109/ESSDERC.2008.4681720
Publication status	Published - 2008
Externally published	Yes
Event	ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom Duration: 2008 Sept 15 → 2008 Sept 19

Publication series

Name	ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

Other	ESSDERC 2008 - 38th European Solid-State Device Research Conference
Country/Territory	United Kingdom
City	Edinburgh, Scotland
Period	08/9/15 → 08/9/19

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ESSDERC.2008.4681720

Cite this

Endo, K., O'Uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Masahara, M., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., & Suzuki, E. (2008). Enhancing noise margins of finFET SRAM by integrating v_th- controllable flexible-pass-gates. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference (pp. 146-149). [4681720] (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2008.4681720

Enhancing noise margins of finFET SRAM by integrating v_th- controllable flexible-pass-gates. / Endo, Kazuhiko; O'Uchi, Shin Ichi; Ishikawa, Yuki et al.

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. p. 146-149 4681720 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endo, K, O'Uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Masahara, M, Sakamoto, K, Tsukada, J, Ishii, K, Yamauchi, H & Suzuki, E 2008, Enhancing noise margins of finFET SRAM by integrating v_th- controllable flexible-pass-gates. in ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference., 4681720, ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference, IEEE Computer Society, pp. 146-149, ESSDERC 2008 - 38th European Solid-State Device Research Conference, Edinburgh, Scotland, United Kingdom, 08/9/15. https://doi.org/10.1109/ESSDERC.2008.4681720

Endo K, O'Uchi SI, Ishikawa Y, Liu Y, Matsukawa T, Masahara M et al. Enhancing noise margins of finFET SRAM by integrating v_th- controllable flexible-pass-gates. In ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society. 2008. p. 146-149. 4681720. (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2008.4681720

Endo, Kazuhiko ; O'Uchi, Shin Ichi ; Ishikawa, Yuki et al. / Enhancing noise margins of finFET SRAM by integrating v_th- controllable flexible-pass-gates. ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference. IEEE Computer Society, 2008. pp. 146-149 (ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference).

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abstract = "We propose a flexible-pass-gate (Flex-PG) FinFET SRAM to enhance both the read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual FinFETs while its pass gates consist of Vth- controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both the read and write margins by controlling the Vth of the pass gates.",

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