The EOT measurement method using the LC Resonance Circuit (LC resonance method) for the thin gate dielectrics having large leakage current is demonstrated. In the LC resonance method, only an external inductance and a resistance and a simple equivalent electrical circuit of MOS devices are employed. The EOT value from thicker gate dielectrics (∼10 nm) to thinner gate dielectrics (∼1 nm) with large leakage current can be defined by the impedance-frequency characteristics at the resonance and be verified at other frequency region and DC gate current -gate voltage characteristics.
|Number of pages||5|
|Publication status||Published - 2005|
|Event||ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures - Leuven, Belgium|
Duration: 2005 Apr 4 → 2005 Apr 7
|Conference||ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures|
|Period||05/4/4 → 05/4/7|