Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

Hiroki Ago; Yui Ogawa; Kenji Kawahara; Yoshito Ito; Baoshan Hu; Carlo M. Orofeo; Pablo Soils Fernandez; Hiroko Endo; Hiroki Hibino; Seigi Mizuno; Kazuhito Tsukagoshi; Masaharu Tsuji

doi:10.1109/IEDM.2015.7409779

Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

Hiroki Ago, Yui Ogawa, Kenji Kawahara, Yoshito Ito, Baoshan Hu, Carlo M. Orofeo, Pablo Soils Fernandez, Hiroko Endo, Hiroki Hibino, Seigi Mizuno, Kazuhito Tsukagoshi, Masaharu Tsuji

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	27.2.1-27.2.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409779
Publication status	Published - 2015 Feb 16
Externally published	Yes
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 2015 Dec 7 → 2015 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Other

Other	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	15/12/7 → 15/12/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2015.7409779

Cite this

Ago, H., Ogawa, Y., Kawahara, K., Ito, Y., Hu, B., Orofeo, C. M., Fernandez, P. S., Endo, H., Hibino, H., Mizuno, S., Tsukagoshi, K., & Tsuji, M. (2015). Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 27.2.1-27.2.4). [7409779] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409779

Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. / Ago, Hiroki; Ogawa, Yui; Kawahara, Kenji et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 27.2.1-27.2.4 7409779 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ago, H, Ogawa, Y, Kawahara, K, Ito, Y, Hu, B, Orofeo, CM, Fernandez, PS, Endo, H, Hibino, H, Mizuno, S, Tsukagoshi, K & Tsuji, M 2015, Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409779, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 27.2.1-27.2.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 15/12/7. https://doi.org/10.1109/IEDM.2015.7409779

Ago H, Ogawa Y, Kawahara K, Ito Y, Hu B, Orofeo CM et al. Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 27.2.1-27.2.4. 7409779. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409779

@inproceedings{63c1378fe21b4dd3a3f0eeb0c49416c2,

title = "Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures",

abstract = "We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.",

author = "Hiroki Ago and Yui Ogawa and Kenji Kawahara and Yoshito Ito and Baoshan Hu and Orofeo, {Carlo M.} and Fernandez, {Pablo Soils} and Hiroko Endo and Hiroki Hibino and Seigi Mizuno and Kazuhito Tsukagoshi and Masaharu Tsuji",

year = "2015",

month = feb,

day = "16",

doi = "10.1109/IEDM.2015.7409779",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "27.2.1--27.2.4",

booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",

note = "61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",

}

TY - GEN

T1 - Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

AU - Ago, Hiroki

AU - Ogawa, Yui

AU - Kawahara, Kenji

AU - Ito, Yoshito

AU - Hu, Baoshan

AU - Orofeo, Carlo M.

AU - Fernandez, Pablo Soils

AU - Endo, Hiroko

AU - Hibino, Hiroki

AU - Mizuno, Seigi

AU - Tsukagoshi, Kazuhito

AU - Tsuji, Masaharu

PY - 2015/2/16

Y1 - 2015/2/16

N2 - We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.

AB - We demonstrate a novel epitaxial CVD method to grow high quality single-layer graphene using a thin Cu(111) film instead of conventional Cu foil. The atomically smooth Cu(111) catalyst produced the graphene with less defects and controlled orientation of the hexagonal lattice. The CVD graphene showed the carrier mobility as high as 20,000 cm2/Vs at room temperature. Using the uniform graphene sheet, densely aligned graphene nanoribbons were produced by a metal-assisted etching technique, resulting a high on/off ratio of 5,000. In addition, the epitaxial CVD method was applied to grow uniform double-layer graphene with more than 90% coverage. These GNRs and double-layer graphene are expected as promising candidates for semiconductor devices. Furthermore, heterostructures of MoS2 and graphene were developed, and unique photo-responsive devices were observed.

UR - http://www.scopus.com/inward/record.url?scp=84964088666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964088666&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2015.7409779

DO - 10.1109/IEDM.2015.7409779

M3 - Conference contribution

AN - SCOPUS:84964088666

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 27.2.1-27.2.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015

Y2 - 7 December 2015 through 9 December 2015

ER -

Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this