Epitaxial GaN layer growth using nitrogen enriched TiN buffer layers

Kazuhiro Ito, Yu Uchida, Sang Jin Lee, Susumu Tsukimoto, Yuhei Ikemoto, Koji Hirata, Naoki Shibata, Masanori Murakami

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)


    About 20 years ago, the discovery of an AlN buffer layer lead to the breakthrough in epitaxial growth of GaN layers with mirror-like surface, using a metal organic chemical vapor deposition (MOCVD) technique on sapphire substrates. Since then, extensive efforts have been continued to develop a conductive buffer layer/substrate for MOCVD-grown GaN layers to improve light emission of GaN light-emitting diodes. In the present study, we produced MOCVD-grown, continuous, flat epitaxial GaN layers on nitrogen enriched TiN buffer layers with the upper limit of the nitrogen content of TiN deposited at room temperature (RT) on sapphire substrates. It was concluded that the nitrogen enrichment would reduce significantly the TiN/GaN interfacial energy. The RT deposition of the TiN buffer layers suppresses their grain growth during the nitrogen enrichment and the grain size refining must increase nucleation site of GaN. In addition, threading dislocation density in the GaN layers grown on TiN was much lower than that in the GaN layers grown on AlN.

    Original languageEnglish
    Pages (from-to)71-76
    Number of pages6
    JournalMaterials Research Society Symposium Proceedings
    Publication statusPublished - 2006 Oct 20
    Event2006 MRS Spring Meeting - San Frnacisco, CA, United States
    Duration: 2006 Apr 182006 Apr 19

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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