TY - JOUR
T1 - Epitaxial growth and electronic structure of oxyhydride SrVO2H thin films
AU - Katayama, Tsukasa
AU - Chikamatsu, Akira
AU - Yamada, Keisuke
AU - Shigematsu, Kei
AU - Onozuka, Tomoya
AU - Minohara, Makoto
AU - Kumigashira, Hiroshi
AU - Ikenaga, Eiji
AU - Hasegawa, Tetsuya
N1 - Publisher Copyright:
© 2016 Author(s).
PY - 2016/8/28
Y1 - 2016/8/28
N2 - Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H--V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.
AB - Oxyhydride SrVO2H epitaxial thin films were fabricated on SrTiO3 substrates via topotactic hydridation of oxide SrVO3 films using CaH2. Structural and composition analyses suggested that the SrVO2H film possessed one-dimensionally ordered V-H--V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO2H film was reversible to SrVO3 by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V3+ valence state in the SrVO2H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.
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U2 - 10.1063/1.4961446
DO - 10.1063/1.4961446
M3 - Article
AN - SCOPUS:84983670419
SN - 0021-8979
VL - 120
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8
M1 - 085305
ER -