TY - JOUR
T1 - Epitaxial growth of (001)-oriented titanium nitride thin films by N implantation
AU - Kasukabe, Y.
AU - Ito, A.
AU - Nagata, S.
AU - Kishimoto, M.
AU - Fujino, Y.
AU - Yamaguchi, S.
AU - Yamada, Y.
PY - 1998
Y1 - 1998
N2 - The epitaxial growth process of titanium nitride (TiN) films, formed by implanting nitrogen ions (N+2) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied by transmission electron microscopy. Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the (001)-oriented TiNy is epitaxially grown by N implantation into the as-grown (03·5)-oriented hcp Ti. The TiNy is formed by the transformation of the hcp Ti to (001)-oriented fcc Ti during the N implantation, partially inheriting the atomic arrangement of the square and/or the octahedron of the hcp Ti, as well as the occupation of N in octahedral sites of the fcc Ti. Strain due to the expansion of the lattice and/or the volume of hcp Ti by N implantation can be considered as one of the driving forces for the hcp-fcc transformation of the Ti lattice. The nitriding mechanism of epitaxial Ti thin films is discussed.
AB - The epitaxial growth process of titanium nitride (TiN) films, formed by implanting nitrogen ions (N+2) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied by transmission electron microscopy. Rutherford backscattering spectrometry, and elastic recoil detection analysis. It has been revealed that the (001)-oriented TiNy is epitaxially grown by N implantation into the as-grown (03·5)-oriented hcp Ti. The TiNy is formed by the transformation of the hcp Ti to (001)-oriented fcc Ti during the N implantation, partially inheriting the atomic arrangement of the square and/or the octahedron of the hcp Ti, as well as the occupation of N in octahedral sites of the fcc Ti. Strain due to the expansion of the lattice and/or the volume of hcp Ti by N implantation can be considered as one of the driving forces for the hcp-fcc transformation of the Ti lattice. The nitriding mechanism of epitaxial Ti thin films is discussed.
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U2 - 10.1116/1.581047
DO - 10.1116/1.581047
M3 - Article
AN - SCOPUS:0032372026
SN - 0734-2101
VL - 16
SP - 482
EP - 489
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 2
ER -