Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH₄-B₂H ₆-H₂ gas mixture without substrate heating

Characteristics of B-doped Si epitaxial growth on Si(100) by using electron-cyclotron-resonance Ar plasma enhanced chemical vapor deposition without substrate heating in a SiH₄-B₂H₆-H ₂-Ar gas mixture were investigated. B concentration in the deposited films increases with decreasing microwave power for plasma generation. At the microwave power of 125 W, the B concentration increases up to 5 × 10 ²¹ cm^{- 3}. Deposition rate of the B-doped Si tends to be enhanced at the higher B₂H₆ partial pressure. Resistivity of the B-doped Si film tends to increase with decreasing the microwave power. Referring Irvin curve, in the case of 200 W, the carrier concentration is estimated to be at least about 10¹⁷ cm^{- 3} at the B concentration of 10²¹ cm^{- 3}. After heat treatment in N₂ atmosphere at 200 °C and 300 °C for 2 h, the resistivity drastically decreases to the value which corresponds to carrier concentration of around 10¹⁹ cm^{- 3}. From Fourier transform infrared spectroscopy measurement, it is found that hydrogen incorporated in the as-deposited film desorbed by the heat treatment.