Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

Yue Wang; Tianjun Li; Jian Wang; Takashi Harumoto; Tingting Jia; Hideo Kimura; Katsuyuki Nakada; Shigeki Nakagawa; Yoshio Nakamura; Ji Shi

doi:10.1063/1.4974888

Epitaxial growth of BiFeO₃ films on TiN under layers by sputtering deposition

Yue Wang, Tianjun Li, Jian Wang, Takashi Harumoto, Tingting Jia, Hideo Kimura, Katsuyuki Nakada, Shigeki Nakagawa, Yoshio Nakamura, Ji Shi

Research output: Contribution to journal › Article › peer-review

Abstract

BiFeO₃/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO₃ films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO₃ films. Their crystallographic relationship is shown as following: tetragonal-BiFeO₃ (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO₃ (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO₃ and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO₃ layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO₃ films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO₃ is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.

Original language	English
Article number	055815
Journal	AIP Advances
Volume	7
Issue number	5
DOIs	https://doi.org/10.1063/1.4974888
Publication status	Published - 2017 May 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4974888

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title = "Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition",

abstract = "BiFeO3/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.",

author = "Yue Wang and Tianjun Li and Jian Wang and Takashi Harumoto and Tingting Jia and Hideo Kimura and Katsuyuki Nakada and Shigeki Nakagawa and Yoshio Nakamura and Ji Shi",

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year = "2017",

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doi = "10.1063/1.4974888",

language = "English",

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T1 - Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

AU - Wang, Yue

AU - Li, Tianjun

AU - Wang, Jian

AU - Harumoto, Takashi

AU - Jia, Tingting

AU - Kimura, Hideo

AU - Nakada, Katsuyuki

AU - Nakagawa, Shigeki

AU - Nakamura, Yoshio

AU - Shi, Ji

PY - 2017/5/1

Y1 - 2017/5/1

N2 - BiFeO3/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.

AB - BiFeO3/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.

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Epitaxial growth of BiFeO₃ films on TiN under layers by sputtering deposition

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