Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition

Yue Wang, Tianjun Li, Jian Wang, Takashi Harumoto, Tingting Jia, Hideo Kimura, Katsuyuki Nakada, Shigeki Nakagawa, Yoshio Nakamura, Ji Shi

Research output: Contribution to journalArticlepeer-review


BiFeO3/TiN/MgO (001) films have been prepared by magneton sputtering, where TiN serves as a conductive under layer. X-ray diffraction profiles and cross-sectional transmission electron microscopy images reveal that not only (001)-epitaxial BiFeO3 films are obtained, but also both tetragonal and rhombohedral phases co-exist in BiFeO3 films. Their crystallographic relationship is shown as following: tetragonal-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100] and rhombohedral-BiFeO3 (001) [100]//TiN (001) [100]//MgO (001) [100]. Besides, an oxidized TiN layer (∼ 20 nm) has also been detected between BiFeO3 and TiN layers and its formation may originate from oxygen inter-diffusion from BiFeO3 layer. Despite of the existence of the oxidized TiN layer, it does not affect the epitaxial growth of BiFeO3 films. On the other hand, the coercivity electric field obtained in ferroelectric loop of BiFeO3 is greatly enhanced to 49 MV/cm due to the existence of oxidized TiN layer.

Original languageEnglish
Article number055815
JournalAIP Advances
Issue number5
Publication statusPublished - 2017 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Epitaxial growth of BiFeO3 films on TiN under layers by sputtering deposition'. Together they form a unique fingerprint.

Cite this