TY - GEN
T1 - Epitaxial growth of C60 thin films using continuous-wave laser molecular beam epitaxy
AU - Yaginuma, Seiichiro
AU - Itaka, Kenji
AU - Haemori, Masamitsu
AU - Katayama, Masao
AU - Matsumoto, Yuji
AU - Koinuma, Hideomi
PY - 2006
Y1 - 2006
N2 - We have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.
AB - We have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.
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U2 - 10.1557/proc-0965-s14-06
DO - 10.1557/proc-0965-s14-06
M3 - Conference contribution
AN - SCOPUS:40949103090
SN - 9781604234176
T3 - Materials Research Society Symposium Proceedings
SP - 223
EP - 227
BT - Organic Electronics
PB - Materials Research Society
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 1 December 2006
ER -