TY - JOUR
T1 - Epitaxial growth of Er3+-doped CaF2 by molecular beam epitaxy
AU - Adachi, K.
AU - Yao, T.
AU - Taniuchi, T.
AU - Kasuya, A.
AU - Miles, R. H.
AU - Uda, S.
AU - Fukuda, T.
PY - 1996
Y1 - 1996
N2 - Monocrystalline Er3+-doped CaF2 layers are grown on CaF2 substrates by molecular beam epitaxy (MBE) with Er3+ concentration up to 31.2 wt%. The lattice parameter and the crystallinity of the epilayers are investigated by X-ray diffraction analysis, electron probe microanalysis, and scanning electron microscopy. Green light emission at 538 nm is generated by upconversion for the first time, using a 798 nm laser diode pump. Maximum emission intensity at this wavelength is obtained at an Er3+ concentration of 13.3 wt%.
AB - Monocrystalline Er3+-doped CaF2 layers are grown on CaF2 substrates by molecular beam epitaxy (MBE) with Er3+ concentration up to 31.2 wt%. The lattice parameter and the crystallinity of the epilayers are investigated by X-ray diffraction analysis, electron probe microanalysis, and scanning electron microscopy. Green light emission at 538 nm is generated by upconversion for the first time, using a 798 nm laser diode pump. Maximum emission intensity at this wavelength is obtained at an Er3+ concentration of 13.3 wt%.
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U2 - 10.1143/jjap.35.l435
DO - 10.1143/jjap.35.l435
M3 - Article
AN - SCOPUS:0030121771
SN - 0021-4922
VL - 35
SP - L435-L437
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4 A
ER -