TY - JOUR
T1 - Epitaxial growth of FeSe0.5Te0.5 thin films on CaF2 substrates with high critical current density
AU - Tsukada, Ichiro
AU - Hanawa, Masafumi
AU - Akiike, Takanori
AU - Nabeshima, Fuyuki
AU - Imai, Yoshinori
AU - Ichinose, Ataru
AU - Komiya, Seiki
AU - Hikage, Tatsuo
AU - Kawaguchi, Takahiko
AU - Ikuta, Hiroshi
AU - Maeda, Atsutaka
PY - 2011/5
Y1 - 2011/5
N2 - In-situ epitaxial growth of FeSe0.5Te0.5 thin films is demonstrated on a nonoxide substrate CaF2. Structural analysis reveals that compressive stress is moderately added to 36-nm-thick FeSe 0.5Te0.5, which pushes up the critical temperature to above 15K, showing higher values than that of bulk crystals. The critical current density at T = 4.5 K reaches 5.9 × 104 A cm -2 at μ0H= 10T, and 4.2 × 104Acm -2 at μ0H = 14T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.
AB - In-situ epitaxial growth of FeSe0.5Te0.5 thin films is demonstrated on a nonoxide substrate CaF2. Structural analysis reveals that compressive stress is moderately added to 36-nm-thick FeSe 0.5Te0.5, which pushes up the critical temperature to above 15K, showing higher values than that of bulk crystals. The critical current density at T = 4.5 K reaches 5.9 × 104 A cm -2 at μ0H= 10T, and 4.2 × 104Acm -2 at μ0H = 14T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.
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U2 - 10.1143/APEX.4.053101
DO - 10.1143/APEX.4.053101
M3 - Article
AN - SCOPUS:79956091018
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 5
ER -