Epitaxial growth of hard ferrimagnetic Mn3Ge film on rhodium buffer layer

Atsushi Sugihara, Kazuya Suzuki, Terunobu Miyazaki, Shigemi Mizukami

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Mn3Ge has a tetragonal Heusler-like D022 crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn3Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn3Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn3Ge on Rh show somewhat small coercivity (Hc = 12.6 kOe) and a large perpendicular magnetic anisotropy (Ku = 11.6 Merg/cm3), comparable to that of the film grown on Cr.

Original languageEnglish
Pages (from-to)910-919
Number of pages10
Issue number2
Publication statusPublished - 2015 Jun 2


  • Epitaxial film
  • Hard magnetic materials
  • High coercivity
  • Magnetic properties
  • Spintronics


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