TY - JOUR
T1 - Epitaxial growth of highly strained Si on relaxed Ge/Si(1 0 0) using ECR plasma CVD without substrate heating
AU - Sugawara, Katsutoshi
AU - Sakuraba, Masao
AU - Murota, Junichi
PY - 2007/1/1
Y1 - 2007/1/1
N2 - By using electron-cyclotron resonance (ECR) plasma chemical vapour deposition (CVD), epitaxial growth of highly strained Si on 84%-relaxed Ge/Si(1 0 0) without substrate heating has been investigated. For a Si thickness of 1.7 nm, the deposited surface is atomically flat, and the strain (ratio of change in the lattice constant to strain-free lattice constant) is about 4%. This value indicates that the strained Si lattice is matched to the relaxed Ge lattice. Furthermore, it is found that the heterostructure of strained Si/Ge is thermally stable up to 600 °C.
AB - By using electron-cyclotron resonance (ECR) plasma chemical vapour deposition (CVD), epitaxial growth of highly strained Si on 84%-relaxed Ge/Si(1 0 0) without substrate heating has been investigated. For a Si thickness of 1.7 nm, the deposited surface is atomically flat, and the strain (ratio of change in the lattice constant to strain-free lattice constant) is about 4%. This value indicates that the strained Si lattice is matched to the relaxed Ge lattice. Furthermore, it is found that the heterostructure of strained Si/Ge is thermally stable up to 600 °C.
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U2 - 10.1088/0268-1242/22/1/S10
DO - 10.1088/0268-1242/22/1/S10
M3 - Article
AN - SCOPUS:34247183087
SN - 0268-1242
VL - 22
SP - S42-S45
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 1
M1 - S10
ER -