Abstract
Epitaxial growth of L10-FePt/MgO/L10-FePt (0 0 1) trilayer structures on an Au (0 0 1) monocrystalline buffer layer was investigated. By post-annealing at 500 °C, flat Au (0 0 1) buffer layers with roughness of Ra∼0.1 nm were obtained on a 10-nm-thick Fe (0 0 1) seed layer. Despite a large lattice mismatch between L10-FePt and MgO (∼10%), fully epitaxial growth of L10-FePt/MgO/L10-FePt (0 0 1) trilayers was achieved on the Au buffer layer, suggesting that the combination of L10-FePt and MgO is useful for fabrication of perpendicularly magnetized magnetic tunnel junctions.
Original language | English |
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Pages (from-to) | 1905-1907 |
Number of pages | 3 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 310 |
Issue number | 2 SUPPL. PART 3 |
DOIs | |
Publication status | Published - 2007 Mar |
Keywords
- Epitaxial growth
- FePt
- L1 structure
- MgO
- Perpendicular magnetization
- Roughness