Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction

A. Ichikawa, Y. Hirose, T. Ikeda, T. Noda, M. Fujiu, T. Takatsuka, A. Moriya, M. Sakuraba, T. Matsuura, J. Murota

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21 Citations (Scopus)


Epitaxial growth of Si1-x-yGexCy epitaxial on S(100) has been investigated at 550 °C in a SiH4-GeH4-CH3SiH3-H2 gas mixture using an ultraclean hot-wall low pressure chemical vapor deposition (LPCVD) system. With increasing CH3SiH3 partial pressure, the deposition rate decreases depending on the Ge fraction, the C concentration increases linearly up to about 1021 cm-3, and the Ge fraction increases at a high CH3SiH3 partial pressure. These characteristics can be explained by the modified Langmuir-type formulation with the assumption that CH3SiH3 is adsorbed more preferably at the Si-Ge pair site, suppressing SiH4 and GeH4 adsorption. The electrical characteristics of the Pimplanted Si1-x-yGexCy epitaxial film were evaluated and it was found that electrically inactive P increases at a C concentration over 3×1020 cm-3, which corresponds to the concentration where the lattice constant deviates from that calculated using Vegard's law.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalThin Solid Films
Issue number1
Publication statusPublished - 2000 Jul 3
EventThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
Duration: 1999 Sept 121999 Sept 17


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