Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations

Hee Bog Kang; Kiyoshi Nakamura; Sung Hwan Lim; Daisuke Shindo

doi:10.1143/jjap.37.781

Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations

Hee Bog Kang, Kiyoshi Nakamura, Sung Hwan Lim, Daisuke Shindo

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The details of epitaxial growth and microstructural characteristics of ZnO films grown on (0001) sapphire were investigated using X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), and plan-view and cross-sectional transmission electron microscopy (TEM). The films were grown by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The ECR-assisted MBE was found to be capable of growing high quality epitaxial ZnO films at low temperatures in comparison with chemical vapor deposition (CVD) and RF sputtering. The films exhibited a high degree of epitaxy, a sharp interface between film and substrate, and a smooth surface morphology. The TEM observations revealed that the films were epitaxial with an orientational relationship of (0001)ZnO ∥ (0001)Al₂O₃ and [1210]ZnO ∥ [1100]Al₂O₃. This is equivalent to a 30° rotation of ZnO relative to sapphire in (0001) plane.

Original language	English
Pages (from-to)	781-785
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.37.781
Publication status	Published - 1998 Mar
Externally published	Yes

Keywords

ECR-assisted MBE
Epitaxy
TEM
Zinc oxide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.37.781

Cite this

Kang, H. B., Nakamura, K., Lim, S. H., & Shindo, D. (1998). Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37(3 A), 781-785. https://doi.org/10.1143/jjap.37.781

Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations. / Kang, Hee Bog; Nakamura, Kiyoshi; Lim, Sung Hwan et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 3 A, 03.1998, p. 781-785.

Research output: Contribution to journal › Article › peer-review

Kang, HB, Nakamura, K, Lim, SH & Shindo, D 1998, 'Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 37, no. 3 A, pp. 781-785. https://doi.org/10.1143/jjap.37.781

Kang, Hee Bog ; Nakamura, Kiyoshi ; Lim, Sung Hwan et al. / Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1998 ; Vol. 37, No. 3 A. pp. 781-785.

@article{d8e809f8db7f42308c66809af3018142,

title = "Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations",

abstract = "The details of epitaxial growth and microstructural characteristics of ZnO films grown on (0001) sapphire were investigated using X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), and plan-view and cross-sectional transmission electron microscopy (TEM). The films were grown by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The ECR-assisted MBE was found to be capable of growing high quality epitaxial ZnO films at low temperatures in comparison with chemical vapor deposition (CVD) and RF sputtering. The films exhibited a high degree of epitaxy, a sharp interface between film and substrate, and a smooth surface morphology. The TEM observations revealed that the films were epitaxial with an orientational relationship of (0001)ZnO ∥ (0001)Al2O3 and [1210]ZnO ∥ [1100]Al2O3. This is equivalent to a 30° rotation of ZnO relative to sapphire in (0001) plane.",

keywords = "ECR-assisted MBE, Epitaxy, TEM, Zinc oxide",

author = "Kang, {Hee Bog} and Kiyoshi Nakamura and Lim, {Sung Hwan} and Daisuke Shindo",

year = "1998",

month = mar,

doi = "10.1143/jjap.37.781",

language = "English",

volume = "37",

pages = "781--785",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 A",

}

TY - JOUR

T1 - Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations

AU - Kang, Hee Bog

AU - Nakamura, Kiyoshi

AU - Lim, Sung Hwan

AU - Shindo, Daisuke

PY - 1998/3

Y1 - 1998/3

N2 - The details of epitaxial growth and microstructural characteristics of ZnO films grown on (0001) sapphire were investigated using X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), and plan-view and cross-sectional transmission electron microscopy (TEM). The films were grown by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The ECR-assisted MBE was found to be capable of growing high quality epitaxial ZnO films at low temperatures in comparison with chemical vapor deposition (CVD) and RF sputtering. The films exhibited a high degree of epitaxy, a sharp interface between film and substrate, and a smooth surface morphology. The TEM observations revealed that the films were epitaxial with an orientational relationship of (0001)ZnO ∥ (0001)Al2O3 and [1210]ZnO ∥ [1100]Al2O3. This is equivalent to a 30° rotation of ZnO relative to sapphire in (0001) plane.

AB - The details of epitaxial growth and microstructural characteristics of ZnO films grown on (0001) sapphire were investigated using X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), and plan-view and cross-sectional transmission electron microscopy (TEM). The films were grown by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). The ECR-assisted MBE was found to be capable of growing high quality epitaxial ZnO films at low temperatures in comparison with chemical vapor deposition (CVD) and RF sputtering. The films exhibited a high degree of epitaxy, a sharp interface between film and substrate, and a smooth surface morphology. The TEM observations revealed that the films were epitaxial with an orientational relationship of (0001)ZnO ∥ (0001)Al2O3 and [1210]ZnO ∥ [1100]Al2O3. This is equivalent to a 30° rotation of ZnO relative to sapphire in (0001) plane.

KW - ECR-assisted MBE

KW - Epitaxy

KW - TEM

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=0032023610&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032023610&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.781

DO - 10.1143/jjap.37.781

M3 - Article

AN - SCOPUS:0032023610

SN - 0021-4922

VL - 37

SP - 781

EP - 785

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 3 A

ER -

Epitaxial growth of ZnO films on (0001) sapphire at low temperatures by electron cyclotron resonance-assisted molecular beam epitaxy and their microstructural characterizations

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this