TY - JOUR
T1 - Epitaxial growth processes of graphene on silicon substrates
AU - Fukidome, Hirokazu
AU - Miyamoto, Yu
AU - Handa, Hiroyuki
AU - Salto, Eiji
AU - Suemitsu, Maki
PY - 2010
Y1 - 2010
N2 - Few-layers graphene is epitaxially grown on silicon substrates via SiC thin films inserted in between. We have conducted a detailed structural characterization of this graphene-on-silicon (GOS) material by Raman spectroscopy and transmission-electron microscopy, to obtain insights into the impacts of process parameters on defect formation. Results suggest that defects in graphene preferentially dwell at steps. Future flattening of the SiC surface, prior to graphene growth, is thus expected to contribute to the improvement of GOS quality.
AB - Few-layers graphene is epitaxially grown on silicon substrates via SiC thin films inserted in between. We have conducted a detailed structural characterization of this graphene-on-silicon (GOS) material by Raman spectroscopy and transmission-electron microscopy, to obtain insights into the impacts of process parameters on defect formation. Results suggest that defects in graphene preferentially dwell at steps. Future flattening of the SiC surface, prior to graphene growth, is thus expected to contribute to the improvement of GOS quality.
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U2 - 10.1143/JJAP.49.01AH03
DO - 10.1143/JJAP.49.01AH03
M3 - Article
AN - SCOPUS:77950800343
SN - 0021-4922
VL - 49
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1 Part 2
M1 - 01AH03
ER -