Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Toshio Kochiya; Yutaka Oyama; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/j.mssp.2003.05.003

Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The epitaxial lateral overgrowth (ELO) was performed on {001}, {111}A,B and {110} oriented InP by liquid-phase epitaxy at constant growth temperature (450-650°C). According to the observations of cross-sectional shape, the orientation dependence of the vertical growth rate was determined to be {110}<{111}A,B>{100} under the present experimental conditions. The etch pit density in the ELO layer was lower than on openings. In PL mapping observations, PL properties were improved on the ELO layer.

Original language	English
Pages (from-to)	465-468
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.05.003
Publication status	Published - 2003 Oct 1

Keywords

Epitaxial lateral overgrowth
Etch pit distribution
InP
Liquid-phase epitaxy
PL mapping

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2003.05.003

Cite this

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title = "Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces",

abstract = "The epitaxial lateral overgrowth (ELO) was performed on {001}, {111}A,B and {110} oriented InP by liquid-phase epitaxy at constant growth temperature (450-650°C). According to the observations of cross-sectional shape, the orientation dependence of the vertical growth rate was determined to be {110}<{111}A,B>{100} under the present experimental conditions. The etch pit density in the ELO layer was lower than on openings. In PL mapping observations, PL properties were improved on the ELO layer.",

keywords = "Epitaxial lateral overgrowth, Etch pit distribution, InP, Liquid-phase epitaxy, PL mapping",

author = "Toshio Kochiya and Yutaka Oyama and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2003",

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journal = "Materials Science in Semiconductor Processing",

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TY - JOUR

T1 - Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

AU - Kochiya, Toshio

AU - Oyama, Yutaka

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The epitaxial lateral overgrowth (ELO) was performed on {001}, {111}A,B and {110} oriented InP by liquid-phase epitaxy at constant growth temperature (450-650°C). According to the observations of cross-sectional shape, the orientation dependence of the vertical growth rate was determined to be {110}<{111}A,B>{100} under the present experimental conditions. The etch pit density in the ELO layer was lower than on openings. In PL mapping observations, PL properties were improved on the ELO layer.

AB - The epitaxial lateral overgrowth (ELO) was performed on {001}, {111}A,B and {110} oriented InP by liquid-phase epitaxy at constant growth temperature (450-650°C). According to the observations of cross-sectional shape, the orientation dependence of the vertical growth rate was determined to be {110}<{111}A,B>{100} under the present experimental conditions. The etch pit density in the ELO layer was lower than on openings. In PL mapping observations, PL properties were improved on the ELO layer.

KW - Epitaxial lateral overgrowth

KW - Etch pit distribution

KW - InP

KW - Liquid-phase epitaxy

KW - PL mapping

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U2 - 10.1016/j.mssp.2003.05.003

DO - 10.1016/j.mssp.2003.05.003

M3 - Article

AN - SCOPUS:1642587260

SN - 1369-8001

VL - 6

SP - 465

EP - 468

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5-6

ER -

Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Abstract

Keywords

ASJC Scopus subject areas

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