Epitaxial multilayers of β -FeSi2 nanodots/Si for Si-based nanostructured electronic materials

Shunya Sakane; Masayuki Isogawa; Kentaro Watanabe; Jun Kikkawa; Shotaro Takeuchi; Akira Sakai; Yoshiaki Nakamura

doi:10.1116/1.4984107

Epitaxial multilayers of β -FeSi₂ nanodots/Si for Si-based nanostructured electronic materials

Shunya Sakane, Masayuki Isogawa, Kentaro Watanabe, Jun Kikkawa, Shotaro Takeuchi, Akira Sakai, Yoshiaki Nakamura

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Epitaxial growth method for multilayered structures of ultrasmall β-FeSi₂ nanodots (NDs)/Si was developed as a Si-based material for thermoelectric or optical devices by applying our ultrathin SiO₂ film technique. In this technique, strain-relaxed β-FeSi₂ NDs were epitaxially grown with high density. For the formation of multilayered structures, Si growth on these β-FeSi₂ NDs was carefully investigated. Si grew epitaxially on the NDs in three-dimension because of the lattice mismatch strain with the underlying NDs. As a result of three-dimensional Si growth, thicker Si (>20 monolayer) was needed to completely cover the NDs. The authors demonstrated that strain-relaxed β-FeSi₂ NDs and the Si covering are two important factors for the formation of multilayered structures of β-FeSi₂ NDs/Si.

Original language	English
Article number	041402
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	35
Issue number	4
DOIs	https://doi.org/10.1116/1.4984107
Publication status	Published - 2017 Jul 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "Epitaxial growth method for multilayered structures of ultrasmall β-FeSi2 nanodots (NDs)/Si was developed as a Si-based material for thermoelectric or optical devices by applying our ultrathin SiO2 film technique. In this technique, strain-relaxed β-FeSi2 NDs were epitaxially grown with high density. For the formation of multilayered structures, Si growth on these β-FeSi2 NDs was carefully investigated. Si grew epitaxially on the NDs in three-dimension because of the lattice mismatch strain with the underlying NDs. As a result of three-dimensional Si growth, thicker Si (>20 monolayer) was needed to completely cover the NDs. The authors demonstrated that strain-relaxed β-FeSi2 NDs and the Si covering are two important factors for the formation of multilayered structures of β-FeSi2 NDs/Si.",

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AU - Sakane, Shunya

AU - Isogawa, Masayuki

AU - Watanabe, Kentaro

AU - Kikkawa, Jun

AU - Takeuchi, Shotaro

AU - Sakai, Akira

AU - Nakamura, Yoshiaki

PY - 2017/7/1

Y1 - 2017/7/1

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AB - Epitaxial growth method for multilayered structures of ultrasmall β-FeSi2 nanodots (NDs)/Si was developed as a Si-based material for thermoelectric or optical devices by applying our ultrathin SiO2 film technique. In this technique, strain-relaxed β-FeSi2 NDs were epitaxially grown with high density. For the formation of multilayered structures, Si growth on these β-FeSi2 NDs was carefully investigated. Si grew epitaxially on the NDs in three-dimension because of the lattice mismatch strain with the underlying NDs. As a result of three-dimensional Si growth, thicker Si (>20 monolayer) was needed to completely cover the NDs. The authors demonstrated that strain-relaxed β-FeSi2 NDs and the Si covering are two important factors for the formation of multilayered structures of β-FeSi2 NDs/Si.

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Epitaxial multilayers of β -FeSi₂ nanodots/Si for Si-based nanostructured electronic materials

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