Epitaxial multilayers of β -FeSi2 nanodots/Si for Si-based nanostructured electronic materials

Shunya Sakane, Masayuki Isogawa, Kentaro Watanabe, Jun Kikkawa, Shotaro Takeuchi, Akira Sakai, Yoshiaki Nakamura

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Epitaxial growth method for multilayered structures of ultrasmall β-FeSi2 nanodots (NDs)/Si was developed as a Si-based material for thermoelectric or optical devices by applying our ultrathin SiO2 film technique. In this technique, strain-relaxed β-FeSi2 NDs were epitaxially grown with high density. For the formation of multilayered structures, Si growth on these β-FeSi2 NDs was carefully investigated. Si grew epitaxially on the NDs in three-dimension because of the lattice mismatch strain with the underlying NDs. As a result of three-dimensional Si growth, thicker Si (>20 monolayer) was needed to completely cover the NDs. The authors demonstrated that strain-relaxed β-FeSi2 NDs and the Si covering are two important factors for the formation of multilayered structures of β-FeSi2 NDs/Si.

Original languageEnglish
Article number041402
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 2017 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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