TY - JOUR
T1 - Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(1 1 1) substrate
AU - Sazaki, Gen
AU - Fujino, Takuho
AU - Sadowski, Jerzy T.
AU - Usami, Noritaka
AU - Ujihara, Toru
AU - Fujiwara, Kozo
AU - Takahashi, Yukio
AU - Matsubara, Eiichiro
AU - Sakurai, Toshio
AU - Nakajima, Kazuo
N1 - Funding Information:
The authors thank Drs. A. Hoshino and T. Nakada for their valuable discussions. The authors are grateful for the partial support by Grants-in-Aid (No. 14102020: K.N., No. 12130201: E.M.) of Scientific Research of the Ministry of Education, Science and Culture Japan. The author (G.S.) also wishes to acknowledge the partial support by a fund from The Inamori Foundation.
PY - 2004/2/15
Y1 - 2004/2/15
N2 - Surface of an off-cut Si(1 1 1) substrate with an average step distance of 100Å was terminated with monohydride. On this substrate, thin film crystals of organic semiconductor PTCDA were grown by molecular beam epitaxy (MBE). Surface of the thin film crystals on the hydrogen-terminated Si(1 1 1) surface (H-Si(1 1 1)) were observed using ultra-high vacuum scanning tunneling microscopy (UHV-STM) and atomic force microscopy (AFM). The PTCDA thin film crystals had an island shape of Volmer-Weber type. From the direction of the vicinal steps of the substrate [11̄0], we determined the size and orientation of the PTCDA thin film crystals on the H-Si(1 1 1). Long-axis of the two-dimensional (2D) unit cell of the thin film crystals matches the vector (6, 2) of the H-Si(111) surface. We proposed two conceivable epitaxial relations: one is 622/311/3 and the other is point-on-line coincidence. 2D unit cells of the thin film crystals have widely stretched structure (2-10%), and the island growth of Volmer-Weber type is probably due to this large lattice misfit.
AB - Surface of an off-cut Si(1 1 1) substrate with an average step distance of 100Å was terminated with monohydride. On this substrate, thin film crystals of organic semiconductor PTCDA were grown by molecular beam epitaxy (MBE). Surface of the thin film crystals on the hydrogen-terminated Si(1 1 1) surface (H-Si(1 1 1)) were observed using ultra-high vacuum scanning tunneling microscopy (UHV-STM) and atomic force microscopy (AFM). The PTCDA thin film crystals had an island shape of Volmer-Weber type. From the direction of the vicinal steps of the substrate [11̄0], we determined the size and orientation of the PTCDA thin film crystals on the H-Si(1 1 1). Long-axis of the two-dimensional (2D) unit cell of the thin film crystals matches the vector (6, 2) of the H-Si(111) surface. We proposed two conceivable epitaxial relations: one is 622/311/3 and the other is point-on-line coincidence. 2D unit cells of the thin film crystals have widely stretched structure (2-10%), and the island growth of Volmer-Weber type is probably due to this large lattice misfit.
KW - A1. Epitaxial structure
KW - A3. Hydrogen-terminated Si(1 1 1)
KW - A3. Molecular beam epitaxy
KW - B2. Organic semiconductor
KW - B2. PTCDA
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U2 - 10.1016/j.jcrysgro.2003.08.080
DO - 10.1016/j.jcrysgro.2003.08.080
M3 - Article
AN - SCOPUS:0842330018
SN - 0022-0248
VL - 262
SP - 196
EP - 201
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -