TY - JOUR
T1 - Epitaxial strain-controlled ionic conductivity in li-ion solid electrolyte Li0.33La0.56TiO3 thin films
AU - Wei, Jie
AU - Ogawa, Daisuke
AU - Fukumura, Tomoteru
AU - Hirose, Yasushi
AU - Hasegawa, Tetsuya
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/5/6
Y1 - 2015/5/6
N2 - Ionic conductive Li0.33La0.56TiO3 (LLT) epitaxial thin films were grown on perovskite SrTiO3 (100), NdGaO3 (110), and (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) single crystal substrates by pulsed laser deposition. The use of Li-rich Li0.84La0.56TiO3+δ target together with an optimized laser fluence resulted in the growth of phase pure LLT thin films with high growth rate of 2 nm/min. The a-axis and c-axis oriented films were selectively grown by choosing the substrates. Ionic conductivity at room temperature of LLT epitaxial film on NdGaO3 (110) substrate was close to that of bulk previously reported, representing the highly crystalline quality. In addition, the unequally strained lattice due to different in-plane lattice constants of orthorhombic NdGaO3 substrate resulted in laterally anisotropic ionic conductivity with different activation energy perpendicular to NdGaO3 [11¯0] and [001], 6.7 × 10-4 S·cm-1 with 0.34 eV and 4.3 × 10-4 S·cm-1 with 0.36 eV, respectively. This result suggests that the lattice engineering can provide a way to control Li ionic conduction.
AB - Ionic conductive Li0.33La0.56TiO3 (LLT) epitaxial thin films were grown on perovskite SrTiO3 (100), NdGaO3 (110), and (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) single crystal substrates by pulsed laser deposition. The use of Li-rich Li0.84La0.56TiO3+δ target together with an optimized laser fluence resulted in the growth of phase pure LLT thin films with high growth rate of 2 nm/min. The a-axis and c-axis oriented films were selectively grown by choosing the substrates. Ionic conductivity at room temperature of LLT epitaxial film on NdGaO3 (110) substrate was close to that of bulk previously reported, representing the highly crystalline quality. In addition, the unequally strained lattice due to different in-plane lattice constants of orthorhombic NdGaO3 substrate resulted in laterally anisotropic ionic conductivity with different activation energy perpendicular to NdGaO3 [11¯0] and [001], 6.7 × 10-4 S·cm-1 with 0.34 eV and 4.3 × 10-4 S·cm-1 with 0.36 eV, respectively. This result suggests that the lattice engineering can provide a way to control Li ionic conduction.
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U2 - 10.1021/cg501834s
DO - 10.1021/cg501834s
M3 - Article
AN - SCOPUS:84928983773
SN - 1528-7483
VL - 15
SP - 2187
EP - 2191
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 5
ER -