Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

A. Shen; F. Matsukura; Y. Sugawara; T. Kuroiwa; H. Ohno; A. Oiwa; A. Endo; S. Katsumoto; Y. Iye

doi:10.1016/S0169-4332(96)00865-3

Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

A. Shen, F. Matsukura, Y. Sugawara, T. Kuroiwa, H. Ohno, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.

Original language	English
Pages (from-to)	183-188
Number of pages	6
Journal	Applied Surface Science
Volume	113-114
DOIs	https://doi.org/10.1016/S0169-4332(96)00865-3
Publication status	Published - 1997 Apr

Keywords

Diluted magnetic semiconductors
Ferromagnetic order
III-V compounds
Magnetic anisotropy
Molecular-beam epitaxy
Superparamagnetism

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(96)00865-3

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title = "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures",

abstract = "InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.",

keywords = "Diluted magnetic semiconductors, Ferromagnetic order, III-V compounds, Magnetic anisotropy, Molecular-beam epitaxy, Superparamagnetism",

author = "A. Shen and F. Matsukura and Y. Sugawara and T. Kuroiwa and H. Ohno and A. Oiwa and A. Endo and S. Katsumoto and Y. Iye",

note = "Funding Information: This work was partially supportedb y a Grant-in-Aid for the Scientific Researchf rom the Ministry of Education, Science, Sports, and Culture, Japan. The partial supportf rom Japan Society for the Promotion of Science (JSPS) is also acknowledged.O ne of the authors (AS.1 thanks JSPS for awarding him the fellowship to conduct researchi n Japan.",

year = "1997",

month = apr,

doi = "10.1016/S0169-4332(96)00865-3",

language = "English",

volume = "113-114",

pages = "183--188",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

AU - Shen, A.

AU - Matsukura, F.

AU - Sugawara, Y.

AU - Kuroiwa, T.

AU - Ohno, H.

AU - Oiwa, A.

AU - Endo, A.

AU - Katsumoto, S.

AU - Iye, Y.

N1 - Funding Information: This work was partially supportedb y a Grant-in-Aid for the Scientific Researchf rom the Ministry of Education, Science, Sports, and Culture, Japan. The partial supportf rom Japan Society for the Promotion of Science (JSPS) is also acknowledged.O ne of the authors (AS.1 thanks JSPS for awarding him the fellowship to conduct researchi n Japan.

PY - 1997/4

Y1 - 1997/4

N2 - InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.

AB - InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.

KW - Diluted magnetic semiconductors

KW - Ferromagnetic order

KW - III-V compounds

KW - Magnetic anisotropy

KW - Molecular-beam epitaxy

KW - Superparamagnetism

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U2 - 10.1016/S0169-4332(96)00865-3

DO - 10.1016/S0169-4332(96)00865-3

M3 - Article

AN - SCOPUS:0031547321

SN - 0169-4332

VL - 113-114

SP - 183

EP - 188

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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