Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures

A. Shen, F. Matsukura, Y. Sugawara, T. Kuroiwa, H. Ohno, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.

Original languageEnglish
Pages (from-to)183-188
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 1997 Apr


  • Diluted magnetic semiconductors
  • Ferromagnetic order
  • III-V compounds
  • Magnetic anisotropy
  • Molecular-beam epitaxy
  • Superparamagnetism

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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