Epitaxy of graphene on 3C-SiC(111) thin films on microfabricated Si(111) substrates

Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The epitaxy of graphene on 3C-SiC(111) formed on microfabricated Si(111) has been demonstrated. Through observations by optical microscopy, micro-Raman spectroscopy, low-energy electron diffraction, and photoelectron spectroscopy, it has been confirmed that the epitaxial graphene is Bernal-stacked with a buffer layer present between graphene and the 3C-SiC film, which can lead to the opening of the band gap necessary for logic operations. The quality of graphene is improved by the shrinkage of the pattern. These results indicate that graphene on silicon using the microfabricated substrate is a promising material for the realization of graphene-based devices.

Original languageEnglish
Article number06FD02
JournalJapanese Journal of Applied Physics
Issue number6 PART 2
Publication statusPublished - 2012 Jun


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