TY - JOUR
T1 - Epitaxy of graphene on 3C-SiC(111) thin films on microfabricated Si(111) substrates
AU - Ide, Takayuki
AU - Kawai, Yusuke
AU - Handa, Hiroyuki
AU - Fukidome, Hirokazu
AU - Kotsugi, Masato
AU - Ohkochi, Takuo
AU - Enta, Yoshiharu
AU - Kinoshita, Toyohiko
AU - Yoshigoe, Akitaka
AU - Teraoka, Yuden
AU - Suemitsu, Maki
PY - 2012/6
Y1 - 2012/6
N2 - The epitaxy of graphene on 3C-SiC(111) formed on microfabricated Si(111) has been demonstrated. Through observations by optical microscopy, micro-Raman spectroscopy, low-energy electron diffraction, and photoelectron spectroscopy, it has been confirmed that the epitaxial graphene is Bernal-stacked with a buffer layer present between graphene and the 3C-SiC film, which can lead to the opening of the band gap necessary for logic operations. The quality of graphene is improved by the shrinkage of the pattern. These results indicate that graphene on silicon using the microfabricated substrate is a promising material for the realization of graphene-based devices.
AB - The epitaxy of graphene on 3C-SiC(111) formed on microfabricated Si(111) has been demonstrated. Through observations by optical microscopy, micro-Raman spectroscopy, low-energy electron diffraction, and photoelectron spectroscopy, it has been confirmed that the epitaxial graphene is Bernal-stacked with a buffer layer present between graphene and the 3C-SiC film, which can lead to the opening of the band gap necessary for logic operations. The quality of graphene is improved by the shrinkage of the pattern. These results indicate that graphene on silicon using the microfabricated substrate is a promising material for the realization of graphene-based devices.
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U2 - 10.1143/JJAP.51.06FD02
DO - 10.1143/JJAP.51.06FD02
M3 - Article
AN - SCOPUS:84863319097
SN - 0021-4922
VL - 51
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 PART 2
M1 - 06FD02
ER -