Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

H. Fukano; T. Sato; M. Mitsuhara; Y. Kondo; H. Yasaka

doi:10.1049/el:20073357

Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

H. Fukano, T. Sato, M. Mitsuhara, Y. Kondo, H. Yasaka

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Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	1476
Number of pages	1
Journal	Electronics Letters
Volume	43
Issue number	25
DOIs	https://doi.org/10.1049/el:20073357
Publication status	Published - 2007

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10.1049/el:20073357

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AU - Kondo, Y.

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Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

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