Erratum: A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505))

Yun Heub Song; Ji Chel Bea; Kang Wook Lee; Gae Hun Lee; Tetsu Tanaka; Mitsumasa Koyanagi

doi:10.1143/JJAP.49.039201

Erratum: A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505))

Yun Heub Song, Ji Chel Bea, Kang Wook Lee, Gae Hun Lee, Tetsu Tanaka, Mitsumasa Koyanagi

MEN - Biomedical Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	3 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.039201
Publication status	Published - 2010

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10.1143/JJAP.49.039201

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title = "Erratum: A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505))",

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AU - Lee, Gae Hun

AU - Tanaka, Tetsu

AU - Koyanagi, Mitsumasa

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M3 - Comment/debate

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JO - Japanese Journal of Applied Physics

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IS - 3 PART 1

ER -

Erratum: A reliable nonvolatile memory using alloy nanodot layer with extremely high density (Japanese Journal of Applied Physics (2009) 48 (106505))

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